Related papers: Two-dimensional system of strongly interacting ele…
The electronic structure change of NiS$_{2-x}$Se$_x$ as a function of Se concentration $x$ has been studied by Ni $L$-edge X-ray absorption spectroscopy (XAS). The XAS spectra show distinct features in Ni $L_3$ edge, indicating whether the…
It has been shown that the presence of a metal plate near a double quantum well with spatially separated electron and hole layers may lead to a drastic reconstruction of the system state with the formation of stable charged complexes of…
Electrons can form a two-dimensional electron gas at metal surfaces, where lateral confinement leads to quantum-well states. Such states have been observed for highly itinerant electrons, but it remains an open question whether quantum-well…
We have investigated the local magneto-transport in high-quality 2D electron systems at low carrier densities. The positive magneto-resistance in perpendicular magnetic field in the strongly insulating regime has been measured to evaluate…
The time-dependent fluctuations of conductivity \sigma have been studied in a two-dimensional electron system in low-mobility, small-size Si inversion layers. The noise power spectrum is ~1/f^{\alpha} with \alpha exhibiting a sharp jump at…
Electrons most often organize into Fermi-liquid states in which electron-electron interactions play an inessential role. A well known exception is the case of one-dimensional (1D) electron systems (1DES). In 1D the electron Fermi-surface…
Using a combination of ground state quantum Monte-Carlo and finite size scaling techniques, we perform a systematic study of the effect of Coulomb interaction on the localisation length of a disordered two-dimensional electron gas. We find…
The two dimensional system of electrons in a high magnetic field offers an opportunity to investigate a phase transition from a quantum liquid into a Wigner solid. Recent experiments have revealed an incipient composite fermion liquid in a…
We report thermodynamic magnetization measurements of two-dimensional electrons in several high mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density…
We investigate the effects of weak to moderate disorder on the T=0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase,…
We study the renormalization of the Fermi-liquid parameters in the vicinity of a density wave quantum phase transition, which should occur in MOSFET systems at low densities. First, using a perturbative RPA treatment of fluctuations, we…
For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that…
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…
A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore nontrivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…
We investigate the influence of electron--electron interactions on the density of states of a ballistic two--dimensional electron gas. The density of states is determined nonperturbatively by means of path integral techniques allowing for…
We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the…
Large fluctuations of conductivity with time are observed in a low-mobility two-dimensional electron system in silicon at low electron densities $n_s$ and temperatures. A dramatic increase of the noise power ($\propto 1/f^{\alpha}$) as…