Related papers: High performance waveguide uni-travelling carrier …
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires…
This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10$^{15}$ cm$^{-3}$) MOCVD-grown thick $\beta$-Ga$_2$O$_3$ epitaxial drift layers, with thicknesses reaching up to 6.3 $\mu$m,…
Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the…
A three-step process was developed for growing high-quality, optically uniform WSe2 monolayers by molecular beam epitaxy (MBE) with advantage of using hexagonal boron nitride (hBN). The process was optimized to maximize the efficiency of…
We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF$_2$ which has been conventionally used as a substrate. By optimizing temperatures for…
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…
The epitaxial growth of technically-important $\beta$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching…
We describe the development of 1x1 mm2 InAs thermoradiative diodes grown by molecular beam epitaxy with emphasis on their reverse saturation current and break-down voltage. P-i-n diode structures grown at 450 C, with As2 flux around 3 times…
Theoretical and experimental studies of intrinsic Josephson junctions that naturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+{\delta} (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation…
Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However,…
We utilize and characterize high-power, high-linearity modified uni-traveling carrier (MUTC) photodiodes for low-phase-noise photonic microwave generation based on optical frequency division. When illuminated with picosecond pulses from a…
The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the…
Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena,…
Epitaxial growth and controllable doping of wafer-scale single-crystal transition-metal dichalcogenides (TMDCs) are two central tasks for extending Moore's law beyond silicon. However, despite considerable efforts, addressing such crucial…
Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its…
We explore the use of glide symmetry (GS) and electromagnetic bandgap (EBG) technology in a glide-symmetric double corrugated gap waveguide (GSDC-GW) slow wave structure (SWS) for traveling wave tube (TWT) applications. Notably, this GS…
Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towards the growth of wafer-scale, high quality material strongly…
Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire…
Twin photons and triple photons generations require pump laser intensities of several hundred Mega Watts per square centimeter. Micrometer sized crystalline waveguides allow such interactions to be achieved at relatively low energies by…
We have demonstrated efficient intersubband electroabsorption in InGaAs/InAlGaAs/InAlAs step quantum wells grown by metal-organic vapor phase epitaxy (MOVPE). An absorption modulation of 6 dB at $\lambda=6.0 \mu$m due to Stark shift of the…