Related papers: Scalable Memdiodes Exhibiting Rectification and Hy…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as…
This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management…
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive…
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital…
We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature…
Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…
We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both…
Advanced neural interfaces mediate a bio-electronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading…
To obtain precisely controllable, robust as well as reproduceable memristor for efficient neuromorphic computing still very challenging. Molecular tailoring aims at obtaining the much more flexibly tuning plasticity has recently generated…
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the…
Materials of the Y-Ba-Cu-O (melt-textured YBa2Cu3O7-d-based materials or MT-YBCO) and Mg-B-O (MgB2-based materials) systems with high superconducting performance, which can be attained due to the formation of regularly distributed…
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take…
We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations…
Electroforming of metal-oxide-metal memristors is generally attributed to the creation of oxygen-vacancy filaments within the oxide, with noble metal electrodes such as Pt and Au remaining chemically inert. Here, we demonstrate that…
In this work, we report on the electrochemical behavior of nitrided spaced TiO$_2$ nanotubes conformally coated with a nanocrystalline Nb$_2$O$_5$ layer and find for these hierarchical structures an excellent supercapacitor performance.…
Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a…
Rectification effects in solid-state devices are a consequence of nonreciprocal transport properties. This phenomenon is usually observed in systems with broken inversion symmetry. In most instances, nonreciprocal transport arises in the…