Related papers: Valley polarization braiding in strained graphene
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a…
Physical properties reflecting valley asymmetry of Landau levels in a biased bilayer graphene under magnetic field are discussed. Within the $4-$band continuum model with Hartree-corrected self-consistent gap and finite damping factor we…
We theoretically study the correlated insulator states, quantum anomalous Hall (QAH) states, and field-induced topological transitions between different correlated states in twisted multilayer graphene systems. Taking twisted…
The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the…
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of…
Monolayer Graphene contains two inequivalent local minimum, valleys, located at $K$ and $K'$ in the Brillouin zone. There has been considerable interest in the use of these two valleys as a doublet for information processing. Herein I…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
We demonstrate the existence of localized states in close vicinity of a linear defect in graphene. These states have insulating or conducting character. Insulating states form a flat band, while conducting states present a slowdown of the…
We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely twisted bilayer graphene with a large twist angle, as an ideal ground for realizing interlayer-coherent excitonic condensates. In these…
We describe the formation of superconducting states in graphene in the presence of pseudo-Landau levels induced by strain, when time reversal symmetry is preserved. We show that superconductivity in strained graphene is quantum critical…
We propose a model of spin-polarized-current state for electrons in bilayer graphene. The model resolves the puzzles as revealed by experiments that (a) the energy gap $E_{\rm gap}$ of the insulating ground state at the charge neutrality…
Valley-polarized quantum Hall states in graphene are described by a Heisenberg O(3) ferromagnet model, with the ordering type controlled by the strength and sign of valley anisotropy. A mechanism resulting from electron coupling to…
Bilayer graphene, in the presence of a one-sided spin-orbit interaction (SOI) induced by a suitably chosen substrate, is predicted to exhibit unconventional Quantum Hall states. The new states arise due to strong SOI-induced splittings of…
Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in…
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle…
The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal warping and a splitting of the parabolic touching bands at the K point of the reciprocal space into four…
We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It…
At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a…
In a Bernal-stacked graphene bilayer, an electronic state in Landau level $% N=0$ is described by its guiding-center index $X$ (in the Landau gauge) and by its valley, spin, and orbital indices $\xi =\pm K,\sigma =\pm 1,$ and $% n=0,1.$…