Related papers: Enhanced ZnTe infiltration in porous silicon by Is…
Porous silicon layers were embedded with ZnTe using the isothermal close space sublimation technique. The presence of ZnTe was demonstrated using cross-sectional energy dispersive spectroscopy maps. ZnTe embedded samples present intense…
Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 ohm.cm and 0.02 ohm.cm) in hydrofluoric (HF) acid of 24.5 precent…
Graded composition CdxZn1-xTe films were prepared by growing several alternate layers of CdTe and ZnTe by the Isothermal Close Space Sublimation technique. The thickness of both kinds of layers was modified along the structure to produce an…
We report on a novel method for tuning and enhancing fluorescence from irradiated polystyrene through electron-beam exposure in gaseous environments. We describe the effect of electron dose and ambient gas on the photoluminescence spectra…
The article addresses the thermophysical properties of porous silicon (PS) samples produced through electrochemical (EC), metal-assisted chemical (MACE), and combined (MACE + EC) etching methods. The PS/MACE+EC sample's thermophysical…
Within this work, the kinetics of the growing stage of porous silicon (PS) during the etching process was studied using the photoacoustic technique. A p-type Si with low resistivity was used as a substrate. An extension of Rosencwaig and…
The problem of determining the porous silicon (PSi) optical constants, thickness, porosity, and surface quality using just reflectance data is board employing evolutionary algorithms. The reflectance measurements were carried out of PSi…
Porous silicon layers (PS) have been prepared in this work via Photoelectrochemical etching process (PEC) of n type silicon wafer of 0.8 ohm.cm resistivity in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times…
Ceramic based materials covered with a mixture of mullite and zircon on the top, strengthened by the addition of zinc and magnesium compounds at different rates (37 % and 50 %) and made by a co-precipitation method are studied. The…
A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been…
Photonic sintering (PS) offers an ultra-fast, contact-free alternative to conventional sintering and has demonstrated its potential for enhancing the sinterability of acceptor-doped barium zirconate (BZY) ceramics. However, a central…
Porosity is a key parameter on thermal barrier coatings, directly influencing thermal conductivity and strain tolerance. Suspension high velocity oxy-fuel (SHVOF) thermal spraying enables the use of sub-micron particles as feedstock,…
Efficient anti-reflection coatings (ARC) improve the light collection and thereby increase the current output of solar cells. By simple electrochemical etching of the Si wafer, porous silicon (PS) layers with excellent broadband…
In this paper we show how reliable measurements on porous ceramic films can be made by appropriate nanoindentation experiments and analysis. Room-temperature mechanical properties of the mixed-conducting perovskite material LSCF6428 were…
There are a few methodologies to monitoring the Porous Silicon (PS) formation in-situ. One of these methodologies is photoacoustic. Previous works that reported the use of photoacoustic to study the PS formation do not provide the physical…
Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores…
In this work the effects of coherent radiation (Laser) and incoherent radiation (Halogen lamp) during the electrochemical etching process on the structural characteristics of n-type PSi samples were investigated. The porosity values were…
Intrabeam scattering (IBS) is a fundamental effect that can limit the performance of high-brightness electron machines, yet it has so far been neglected in standard modelling of RF photoinjectors. Recent measurements at SwissFEL reveal that…
The overall quality of multilayer thin films prepared by electrodeposition is strongly influenced by the surface and interface roughness which increases with the layer number. For that very reason the reliable analysis of the first few…
Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension.…