Related papers: Broad angular anisotropy of multiple scattering in…
The angular distribution function of multiple scattering experienced by 855 MeV electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations…
We present the results of an experimental study of multiple scattering of positively charged high energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the…
We present the experimental observation of the reduction of multiple scattering of high-energy positively charged particles during channeling in single crystals. According to our measurements the rms angle of multiple scattering in the…
A comprehensive numerical investigation has been conducted on the angular distribution and spectrum of radiation emitted by 855 MeV electron and positron beams while traversing a 'quasi-mosaic' bent silicon (111) crystal. This interaction…
We present a measurement of multiple Coulomb scattering of 1 to 6 GeV/c electrons in thin (50-140 um) silicon targets. The data were obtained with the EUDET telescope Aconite at DESY and are compared to parametrisations as used in the…
We observed highly efficient manipulation of the 530 MeV positron beam at Mainz Microtron via bent crystals. The low beam divergence revealed a fine structure in the angular distribution of channeled particles. A compact analytical model,…
Multiple scattering effects of 12 and 20 GeV electrons on 8 and 20 mm thickness carbon targets have been studied with high-resolution silicon microstrip detectors of the UA9 apparatus at the H8 line at CERN. Comparison of the scattering…
Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection…
We directly visualize a two-dimensional anisotropic Wigner crystal and its quantum melting in monolayer 1T-ReSe2 using non-invasive scanning tunnelling microscopy. In crystals with anisotropic effective mass, an electron's quantum…
For a particle traversing a bent crystal in the regime of volume reflection we evaluate the probability of interaction with atomic nuclei. Regardless of the continuous potential shape, this probability is found to differ from the…
Recent experiments performed on weakly pinched quantum point contacts, have shown a resistance that tend to decrease at low source drain voltage. We show that enhanced Coulomb interactions, prompt by the presence of the point contact, may…
The multiple scattering of ultra relativistic electrons in an amorphous matter leads to the suppression of the soft part of radiation spectrum (the Landau-Pomeranchuk-Migdal effect), and also can change essentially the angular distribution…
Computational modelling of passage of high-energy electrons through crystalline media is carried out by means of the relativistic molecular dynamics. The results obtained are compared with the experimental data for 855 MeV electron beam…
The propagation of high-energy electrons in crystals is in general a complicated multiple scattering problem. However, along high-symmetry zone axes the problem can be mapped to the time evolution of a two-dimensional (2D) molecular system.…
We measured a considerable increase of the emitted radiation by 120 GeV/c electrons in an axially oriented lead tungstate scintillator crystal, if compared to the case in which the sample was not aligned with the beam direction. This…
The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to…
This paper reports on a comprehensive study of an ultra-relativistic positron beam deflection by an oriented quasi-mosaic crystal. The analysis was carried out for the positron energy of 530 MeV incident on the quasi-mosaic bent Si(111)…
We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. 15 $\mu $m long crystals, bent along (111) planes, were exploited to investigate orientational coherent effects.…
A 4-period diamond undulator with a thickness of 20 $\mu$m was produced with the method of Chemical Vapour Deposition (CVD), applying boron doping, on a straight diamond crystal with an effective thickness of 165.5 $\mu$m. A planar (110)…
The equations for calculating diffraction profiles for bent crystals are revisited for both meridional and sagittal bending. Two approximated methods for computing diffraction profiles are treated: multilamellar and Penning-Polder. A common…