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4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO$_{3}$ is one such candidate material, serving as a good donor material in interfacial oxide systems and…
Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent…
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…
Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional…
We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in…
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface…
The interplay between electrochemical surface charges and bulk ferroelectricity in thin films gives rise to a continuum of coupled ferro-ionic states. These states are exquisitely sensitive to chemical and electric conditions at the…
This theoretical study investigates the nonlinear ionic current-voltage characteristics of nano-channels that have weakly overlapping electrical double layers. Numerical simulations as well as a 1-D mathematical model are developed to…
HfO$_2$-based ferroelectrics are one of the most actively developed functional materials for memory devices. However, in HfO$_2$-based ferroelectric devices, dielectric breakdown is a main failure mechanism during repeated polarization…
There are several ways to turn a superconductor into a normal conductor: increase the temperature, apply a high magnetic field, or run a large current. High-T$_c$ cuprate superconductors are unusual in the sense that experiments suggest…
The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here we study under what…
Supercurrent field-effect transistors made from thin metallic films are a promising option for next-generation high-performance computation platforms. Despite extensive research, there is still no complete quantitative microscopic…
This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of…
We report the generation of photo-induced electromotive force (EMF) on the surface of c-axis oriented InN epitaxial films grown on sapphire substrates. It has been found that under the illumination of above band gap light, EMFs of different…
Ultracold atom magnetic field microscopy enables the probing of current flow patterns in planar structures with unprecedented sensitivity. In polycrystalline metal (gold) films we observe long-range correlations forming organized patterns…
The nanoscopic characterization of ferroelectric thin films is crucial from their device application point of view. Standard characterization techniques are based on detecting the nanoscopic charge compensation current (switching current)…
The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays.…
Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes governing their behavior, and specifically the atomistic…