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We study the optical conductivity in the III-V diluted magnetic semiconductor GaMnAs and compare our calculations to available experimental data. Our model study is able to reproduce both qualitatively and quantitatively the observed…
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation…
We report both zinc-blende (ZB) and wurtzite (WZ) crystal phase self-assembled GaAs quantum dots (QDs) embedding in a single GaAs/AlGaAs core-shell nanowires (NWs). Optical transitions and single-photon characteristics of both kinds of QDs…
Colloidal semiconductor nanocrystals are nanomaterials synthesized in solution. Below a certain size, these nanocrystals acquire quantum confinement properties: their optoelectronic properties depend on the nanoparticle size. In the visible…
This study provides a comprehensive physical and optical investigation of InGaN nanowires (NWs) designed to address the challenges posed by the green gap region. We conduct a detailed analysis of the morphology, structure, and optical…
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were studied as a function of the concentration of the p-type…
We have studied the microwave electrodynamics of single crystal iron-based superconductors Ba$_{0.72}$K$_{0.28}$Fe$_2$As$_2$ (hole-doped, $T_\mathrm{c}$ $\approx $30 K) and Ba(Fe$_{0.95}$Co$_{0.05}$)$_2$As$_2$ (electron-doped,…
In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport…
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measurements reveal that Si sheet doping doesn't change the…
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of…
To explore the doping dependence of the recently discovered charge density wave (CDW) order in YBa2Cu3Oy, we present a bulk-sensitive high-energy x-ray study for several oxygen concentrations, including strongly underdoped YBa2Cu3O6.44.…
Understanding the pseudogap phase in hole-doped high temperature cuprate superconductors remains a central challenge in condensed matter physics. From a host of recent experiments there is now compelling evidence of translational symmetry…
We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si…
The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various distances on the order of the diffusion length. The methodology…
The characteristic features of Ca$_{10}$(Pt$_3$As$_8$)[(Fe$_{1-x}$Pt$_x$)$_2$As$_2$]$_5$ ("10-3-8") superconductor are relatively high anisotropy and a clear separation of superconductivity and structural/magnetic transitions, which allows…
We report a systematic study on the electronic structure and superconducting (SC) gaps in electron doped NaFe$_{0.95}$Co$_{0.05}$As superconductor using angle-resolved photoemission spectroscopy. Hole-like Fermi sheets are at the zone…
Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates…
We report the effect of co-doping of In and Ga at low concentrations on the structural, electronic, and thermoelectric properties of SnTe based compositions $Sn_{1.03-2x}In_{x}Ga_{x}Te$ (x = 0, 0.01, 0.02, 0.04) prepared by the solid-state…
Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…
This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared…