Related papers: Ultra-low dissipation patterned silicon nanowire a…
A mid-infrared single photon detector (MIR-SNSPD) was reported based on 30 nm-wide superconductor molybdenum silicide nanowires in this work. Saturated quantum efficiencies (QEs) were achieved at the wavelength ranging from 1.55 to 5.07…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
We propose a spintronic strain sensor capable of sensing strain with a sensitivity of 1E-13/sqrt{Hz} at room temperature with an active sensing area of 1 cmE2 and power dissipation of 1 watt. This device measures strain by monitoring the…
Superconducting quantum interference devices (SQUIDs) are exceptionally sensitive magnetometers capable of detecting weak magnetic fields. Miniaturizing these devices and integrating them onto scanning probes enables high-resolution imaging…
This paper presents the design and fabrication of batch-processed cantilever probes with electrical shielding for scanning microwave impedance microscopy. The diameter of the tip apex, which defines the electrical resolution, is less than…
Fabrication of silver nanowires (AgNWs) with fine and independent control of both the diameter (from 30 to 120 nm) and length (from 5 to 120 $\mu$m) by concomitant addition of co-nucleants and temperature control is demonstrated, and used…
Swept laser interferometry is an extremely powerful solution embedded in several recent technologies such as absolute distance measurement, light detection and ranging, optical frequency domain reflectometry, optical coherence tomography,…
This study presents a fabrication process for lithium-drifted silicon (Si(Li)) detectors that, compared to previous methods, allows for mass production at a higher yield, while providing a large sensitive area and low leakage currents at…
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…
Superconducting nanowire single photon detectors (SNSPDs) are fabricated directly on diamond substrates and their optical and electrical properties are characterized. Dark count performance and photon count rates are measured at varying…
The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of…
For photon-counting applications at ultraviolet wavelengths, there are currently no detectors that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark count rates. Superconducting nanowire single-photon…
We demonstrate a scanning force microscope, based upon a quartz tuning fork, that operates below 100 mK and in magnetic fields up to 6 T. The microscope has a conducting tip for electrical probing of nanostructures of interest, and it…
Based on atomistic calculations of electron and phonon transport, we propose to use surface decorated Silicon nanowires (SiNWs) for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying…
We demonstrate the operation of superconducting coplanar microwave resonators in a very large frequency range up to 50 GHz. The resonators are fabricated from niobium thin films on sapphire substrates and optimized for these high…
Using Ensemble Monte Carlo simulations the photocurrent in a 500nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the…
We present a compact current sensor based on a superconducting microwave lumped-element resonator with a nanowire kinetic inductor, operating at 4.2 K. The sensor is suitable for multiplexed readout in GHz range of large-format arrays of…
High-frequency atomic force microscopy has enabled extraordinary new science through large bandwidth, high speed measurements of atomic and molecular structures. However, traditional optical detection schemes restrict the dimensions, and…
A new method of introducing nanopores with spongy morphology during fabrication of size and pitch controlled flexible silicon microwires (SiMWs) in wafer scale is presented using nanosphere lithography technique in addition to metal…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…