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The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times…
The two innermost layers of the ALICE inner tracking system are instrumented with silicon pixel detectors. Single chip assembly prototypes of the ALICE pixels have been tested in high energy particle beams at the CERN SPS. Detection…
Semiconductor pixel detectors are widely established in High Energy Physics (HEP) and Medical physics for their high spatial resolution and tracking capabilities. Research on both monolithic detectors and hybrid detectors is ongoing.…
Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…
In this work, we demonstrate an integrated platform comprising a refractive index (RI) sensor based on Photonic Molecule (PM) that effectively mitigates the influence of environmental perturbations using a differential measurement scheme…
When an X-ray photon lands into a pixel (event pixel), the primary charge is mainly collected into the event pixel. If the X-ray landing position is sufficiently close to the pixel boundary, the primary charge spills over to the adjacent…
Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…
Waveguide-integrated plasmonics is a growing field with many innovative concepts and demonstrated devices in the visible and near-infrared. Here, we extend this body of work to the mid-infrared for the application of surface-enhanced…
The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC…
The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This…
The Transient High Energy Sources and Early Universe Surveyor is an ESA M5 candidate mission currently in Phase A, with Launch in $\sim$2032. The aim of the mission is to complete a Gamma Ray Burst survey and monitor transient X-ray events.…
Due to their radiation hardness, kilohertz frame rates, and high dynamic range, hybrid pixel detectors have recently expanded their application range to electron diffraction and recently also electron imaging. However, these detectors…
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel…
Complex-field imaging is indispensable for numerous applications at wavelengths from X-ray to THz, with amplitude describing transmittance (or reflectivity) and phase revealing intrinsic structure of the target object. Coherent diffraction…
This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of…
Coherent diffraction imaging (CDI) is high-resolution lensless microscopy that has been applied to image a wide range of specimens using synchrotron radiation, X-ray free electron lasers, high harmonic generation, soft X-ray laser and…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD)…