Related papers: Cd acceptors in $Ga_2O_3$, an atomistic view

In order to replace conventional liquid electrolytes, solid electrolyte should possess high ionic conductivity. In this study, the effects of Ga-Ce co-doping on the garnet Li7La3Zr2O12 solid electrolyte have been investigated. The series…

DC and AC electrical measurements were performed to investigate the electrical conductivity of alpha-Al2O3:Mg samples with different concentrations of [Mg]^0 centers .The concentration of [Mg]^0 centers was monitored by the…

Ultrawide bandgap semiconductor $\beta$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage…

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…

The monoclinic crystal structure of $\beta$-$\mathrm{Ga_2O_3}$ leads to significant anisotropy of the thermal properties. The 2$\omega$-method is used to measure the thermal diffusivity $D$ in [010] and [001] direction respectively and to…

The lattice thermal conductivity (LTC) of Ga$_2$O$_3$ is an important property due to the challenge in the thermal management of high-power devices. We develop machine-learned neuroevolution potentials for single-crystalline…

Infrared reflectance measurements were made with light polarized along the a- and c-axis of both superconducting and antiferromagnetic phases of electron doped Nd$_{1.85}$Ce$_{.15}$CuO$_{4+\delta}$. The results are compared to…

Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can…

We investigate acceptor and donor states in GaN nanocrystals doped with a single substitutional impurity. Quantum dots (QD's) of zinc-blende structure and spherical shape are considered with the radius ranging from 4.5 to 67.7 A. The…

We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have…

First-principles dynamical CPA (Coherent-Potential Approximation) for electron correlations has been developed further by taking into account higher-order dynamical corrections with use of the asymptotic approximation. The theory is applied…

$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…

We have in detail characterized the anisotropic charge response of the dimer Mott insulator $\kappa$-(BEDT-TTF)$_2$\-Cu$_2$(CN)$_3$ by dc conductivity, Hall effect and dielectric spectroscopy. At room temperature the Hall coefficient is…

The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…

Direct observation of capture cross-section is challenging due to the need of extremely short filling pulses in the two-gate Deep-Level Transient Spectroscopy (DLTS). Simple estimation of cross-section can be done from DLTS and Admittance…

Crystal and electronic structure, lattice dynamics and thermodynamic stability of little known mixed valent diamagnetic AgIAgIIIF4 beta form of AgF2 is thoroughly examined for the first time and compared with well known antiferromagnetic…

Doping of the ultrawide band gap semicodnctor LiGaO$_2$ ($E_g=5.6$ eV) with N$_2$, NO and O$_2$ molecules placed in either Ga or Li-vacancies is studied using first-principles calculations. These molecular dopants are considered as…

We use coherent pump-probe spectroscopy to measure the photoinduced reflectivity \DeltaR, and complex dielectric function, {\delta}\in, of the electron-doped cuprate superconductor Nd_{2-x}Ce_xCuO_{4+\delta} at a value of x near optimal…

Transport properties of the charge ordering compound $\beta-$Na$_{0.33}$V$_2$O$_5$ are studied in the temperature range from 30 K to 300 K using current driven DC conductivity experiments. It is found that below the metal-insulator…

$\beta-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $\beta-Ga_2O_3$ epitaxial…