Related papers: Excitons in InP, GaP, GaInP quantum dots: Insights…
We calculate the height dependence of recombination energies, polarization and radiative lifetimes of the optical transitions of various excitonic complexes: neutral excitons (X^0), negatively- (X^-) and positively-charged (X^+) trions, and…
We derive a general formalism to model the polariton states resulting from the radiation-matter interaction between an arbitrary number of excitonic transitions in semiconductor quantum dots and photon modes in a photonic crystal structure…
We present the observation of electrically tunable quantum coupling of orbital states in individual InAs/InGaAs quantum dot molecules emitting in the telecom O-band (~1300 nm). By tuning the static electric field along the growth axis of…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to…
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed…
Thermal quenching is one of the essential factors in reducing the efficiency of radiative processes in luminophores of various nature. The emission activity of low dimensional structures is influenced also by multiplicity of parameters that…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not…
Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid-…
We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and…
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD…
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on…
Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of…
Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectroscopy. The dephasing rate of each excitonic state is similar…
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…
Excitons are bosonic quasiparticles with a variety of applications in optoelectronics, photosyn thesis, and dissipationless informatics, and their lifetime can become sufficiently long to form a quantum condensate. While exciton…
We present a comprehensive and integrated model-independent ab initio study of the structural, cohesive, electronic, and optical properties of silicon quantum dots of various morphologies and sizes in the framework of all-electron static…
Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…