Related papers: Atomic Layer Deposition Niobium Nitride Films for …
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…
We characterize inductors fabricated from ultra-thin, approximately 100 nm wide strips of niobium (Nb) and niobium nitride (NbN). These nanowires have a large kinetic inductance in the superconducting state. The kinetic inductance scales…
Atomically thin boron nitride (BN) nanosheets have been found an excellent substrate for noble metal particles enabled surface enhanced Raman spectroscopy (SERS), thanks to their good adsorption of aromatic molecules, high thermal stability…
Progress in superconducting device and detector technologies over the past decade have realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin film…
Superconducting radio-frequency (SRF) resonators are critical components for particle accelerator applications, such as free-electron lasers, and for emerging technologies in quantum computing. Developing advanced materials and their…
Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N…
We are studying the properties of Niobium Silicon amorphous alloys as a candidate material for the fabrication of highly sensitive Kinetic Inductance Detectors (KID), optimized for very low optical loads. As in the case of other composite…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic…
This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride…
Heat management becomes more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation and favorable mechanical properties is of great importance.…
This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a…
We present superconducting nanowire single-photon detectors (SNSPDs) based on few-layer NbSe$_2$ fully encapsulated with hexagonal boron nitride (hBN), demonstrating single-photon sensitivity. Our fabrication process preserves the…
Laser nitriding represents a versatile approach for tailoring the surface properties of metals. Up to now, its effect on the superconducting response of niobium nitrides remains largely unexplored. In this work, the nitriding process of…
Uniformity in thickness and electronic properties of superconducting niobium titanium nitride (NbTiN) thin films is a critical issue for upscaling superconducting electronics, such as microwave kinetic inductance detectors for submillimeter…
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long…
An ultrabroad absorber based on double-ring-shaped titanium nitride (TiN) nanoresonators, which can work in high temperatures, is proposed and numerically studied. The absorber with some optimal parameters exhibits an averaged absorption of…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath…
We report the dielectric functions of insulating tantalum nitride (TaN) films, deposited using atomic layer deposition (ALD) on 300 mm Si/SiO2 substrates, to demonstrate their suitability as tunnel barriers in tantalum-based Josephson…