Related papers: Highly Sensitive, Fast Graphene Photodetector with…
This study introduces a graphene-assisted terahertz metamaterial absorber operating at a resonance frequency of 8.436 THz. The unit cell incorporates a graphene-based split-ring resonator (SRR) configuration with additional auxiliary splits…
Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…
The combination of plasmonic nanoparticles and graphene enhances the responsivity and spectral selectivity of graphene-based photodetectors. However, the small area of the metal-graphene junction, where the induced electron-hole pairs…
We present a graphene photodetector coupled to a layer of aggregated organic semiconductor. A graphene phototransistor is covered with a thin film of merocyanine molecules. The aggregation of the molecular layer can be controlled by the…
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production…
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact…
We present a method where a bioactive functional layer on an electrically conductive thin film with high sheet resistance can be effectively used for complementary electrochemical impedance spectroscopy biosensing. The functional layer's…
The ultimate aspiration of any detection method is to achieve such a level of sensitivity that individual quanta of a measured value can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has…
In recent years, the telecommunications field has experienced an unparalleled proliferation of wireless data traffic. Innovative solutions are imperative to circumvent the inherent limitations of the current technology, in particular in…
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex…
Graphene is a purely two-dimensional material that has extremely favorable chemical sensor properties. It is known, however, that conventional nanolithographic processing typically leaves a resist residue on the graphene surface, whose…
Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical…
The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable…
Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…
Graphene-based photodetectors have demonstrated mechanical flexibility, large operating bandwidth, and broadband spectral response. However, their linear dynamic range (LDR) is limited by graphene's intrinsichot-carrier dynamics, which…
Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
The micro-electromechanical-system (MEMS) force and acceleration sensor utilizing the graphene-induced non-radiative transition was investigated. The graphene-induced non-radiative transition is very sensitive to the distance, and the…
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed…
The ultrafast response and broadband absorption of all-optical graphene switches are highly desirable features for on-chip photonic switching. However, because graphene is an atomically thin material, its absorption of guided optical modes…