Related papers: Highly Sensitive, Fast Graphene Photodetector with…
Implementing new materials as alternative to silicon for application in photonic devices has been the center of attention in the scientific community. Two-Dimensional (2D) materials have shown a great capacity to be next alternative to…
Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown…
Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room…
Emerging colloidal quantum dot (cQD) photodetectors currently challenge established state-of-the-art infrared photodetectors in response speed, spectral tunability, simplicity of solution processable fabrication, and integration onto curved…
In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy…
The efforts to pursue photo detection with extreme performance in terms of ultrafast response time, broad detection wavelength range, and high sensitivity have never been exhausted as driven by its wide range of optoelectronic and photonic…
It is commonly believed that weak light-matter interactions in low-mobility graphene dramatically limits tunability of graphene-based optoelectronic devices, such as tunable absorbers or switches. In this paper, we develop and use a simple…
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…
Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type…
We report on the integration of large area CVD grown single- and bilayer graphene transparent conductive electrodes (TCEs) on amorphous silicon multispectral photodetectors. The broadband transmission of graphene results in 440% enhancement…
Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband…
Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain…
Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…
Graphene plasmons hold immense potential for terahertz (THz) detector application due to their fascinating interactions between radiation and matter. However, it has remained challenging to excite and manipulate graphene plasmons within…
We investigate the absorption properties of graphene-based anisotropic metamaterial structures where the metamaterial layer possesses an electromagnetic response corresponding to a near-zero permittivity. We find that through analytical and…
With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied…
We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz (THz) and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed…
Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…
We report on the efficient photodetection (PD) properties of graphene based p-i-n photodetector, where all the three layers are either single or multilayer graphene sheets. We report the bandwidth and responsivity performance of the device.…