Related papers: Interconversion of multiferroic domains and domain…
Ultrafast switching of ferroic phases is an important research frontier, with significant technological potential. Yet, current efforts are meeting some key challenges, ranging from limited speeds in ferromagnets to intrinsic volatility of…
The recent experimental demonstration of spin-polarized supercurrents offer a venue for establishment of a superconducting analogue to conventional spintronics. Whereas domain wall motion in purely magnetic structures is a well-studied…
We show that it is possible to engineer magnetic multi-domain configurations without domain walls in a prototypical rare earth/transition metal ferrimagnet using keV He+ ion bombardment. We additionally shown that these patterns display a…
The intended use of a magnetic material, from information storage to power conversion, depends crucially on its domain structure, traditionally crafted during materials synthesis. By contrast, we show that an external magnetic field applied…
Charged domain walls and boundaries in ferroelectric materials display distinct phenomena, such as an increased conductivity due to the accumulation of bound charges. Here, we report the electron microscopy observations of atomic-scale…
Domain wall motion underpins emerging spintronic technologies, such as high-speed racetrack devices and THz logic, and accelerating walls quickly is a key challenge on the path to faster devices. Recent experimental advances introduced…
We report the dielectric dispersion of the giant magnetocapacitance (GMC) in multiferroic DyMnO$_{3}$ over a wide frequency range. The GMC is found to be attributable not to the softened electromagnon but to the electric-field-driven motion…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
In numerous functional materials, such as steels, ferroelectrics and magnets, new functionalities can be achieved through the engineering of the domain structures, which are associated with the ordering of certain parameters within the…
Ferroelectric hafnia exhibits promising robust polarization and silicon compatibility for ferroelectric devices. Unfortunately, it suffers from difficult polarization switching. Methods to enable easier polarization switching are needed,…
When subjected to electro-mechanical loading, ferroelectrics see their polarization evolve through the nucleation and evolution of domains. Existing mesoscale phase-field models for ferroelectrics are typically based on a gradient-descent…
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…
Switchable order parameters in ferroic materials are essential for functional electronic devices, yet disruptions of the ordering can take the form of planar boundaries or defects that exhibit distinct properties. Characterizing the…
The structure of domain walls determines to a large extent the properties of magnetic materials, in particular their hardness and switching behavior, it represents an essential ingredient of spintronics. Common domain walls are of Bloch and…
We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and anisotropic spin-flip scattering…
We experimentally study the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. Dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in…
We study ferroelectric domain walls in barium titanate. We search for structurally nontrivial, so-called non-Ising domain walls, where the Polarisation is non-zero along the entire wall. Our approach enables us to find solutions for domain…
Despite remarkable progress in developing multifunctional materials, spin-driven ferroelectrics featuring both spontaneous magnetization and electric polarization are still rare. Among such ferromagnetic ferroelectrics are conical spin…
The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve…
The behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure and the energy of ADW change due to the interaction with a…