Related papers: Surface state transport in double-gated and magnet…
The surface states of the three dimensional (3D) Topological Insulators are described by two-dimensional (2D) massless dirac equation. A gate voltage induced one dimensional potential barrier on such surface creates a discrete bound state…
Gapping of Dirac surface states through time reversal symmetry breaking may realize the axion insulator state in condensed matter. Despite tremendous efforts, only a few material systems fall in this category of intrinsic magnetic…
The surface states of a topological insulator are described by an emergent relativistic massless Dirac equation in 2+1 dimensions. In contrast to graphene, there is an odd number of Dirac points, and the electron spin is directly coupled to…
In magnetic topological insulators, the surface states can exhibit a gap due to the breaking of time-reversal symmetry. Various experiments, while suggesting the existence of the surface gap, have raised questions about its underlying…
In the framework of the Dirac-Bogoliubov-de Gennes formalism, we investigate the transport properties in the surface of a 3-dimensional topological insulator-based hybrid structure, where the ferromagnetic and superconducting orders are…
We have investigated the electrical transport properties of Dirac electrons in a monolayer graphene sheet in the presence of a perpendicular magnetic field that is modulated weakly and periodically along one direction.We find that the…
We study transport phenomena cross-correlated among the heat and electric currents of magnons and Dirac electrons on the surface of ferromagnetic topological insulators. For a perpendicular magnetization, we calculate magnon- (electron-)…
We study transport across either a potential or a magnetic barrier which is placed on the top surface of a three-dimensional thin topological insulator (TI). For such thin TIs, the top and bottom surfaces interact via a coupling $\lambda$…
Two-dimensional (2D) metallic altermagnets present exciting opportunities for both fundamental research and practical innovations. Their ability to enhance tunneling magnetoresistance in magnetic tunnel junctions, combined with the direct…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing…
Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…
We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…
Dirac points in two-dimensional electronic structures are a source for topological electronic states due to the $\pm \pi$ Berry phase that they sustain. Here we show that two rutile multilayers (namely (WO$_2$)$_2$/(ZrO$_2$)$_n$ and…
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…
We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band…
Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to…
A pair of Dirac points (analogous to a vortex-antivortex pair) associated with opposite topological numbers (with $\pm\pi$ Berry phases) can be merged together through parameter tuning and annihilated to gap the Dirac spectrum, offering a…
Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR)…
We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics,…