Related papers: Atomically-Smooth Single-Crystalline VO$_2$ thin f…
Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin…
Vanadium dioxide, a well-known Mott insulator, is a highly studied electronic material with promising applications in information processing and storage. While fully crystalline layers exhibit exceptional properties, such as a sharp and…
We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the…
In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial…
Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a…
The ability to control porosity in oxide thin films is one of the key factors that determine their properties. Despite the abundance of dry processes for the synthesis of oxide porous layers, the high porosity range is typically achieved by…
Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…
Vanadium (IV) oxide is one of the most promising materials for thermochromic films due to its unique, reversible crystal phase transition from monoclinic (M1) to rutile (R) at its critical temperature (T$_c$) which corresponds to a change…
Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO2-based active…
This work reports the fabrication and characterization of high-quality tungsten-doped vanadium dioxide (WxV1-xO2, x = 0~3 at. %) by thermal oxidation of sputtered tungsten-vanadium alloyed thin films with different atomic percentages and…
Pristine vanadium dioxide (VO2), an insulator-to-metal transition (IMT) material, is grown via furnace oxidation followed by rapid thermal annealing with forming gas (5%H2/95%N2) which reduces surface over-oxides such as V2O5 formed during…
Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance…
We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator…
Pure rutile Co-doped TiO$_2$ films were fabricated successfully by the conventional pulsed laser deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could…
Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical…
Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…
Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 {\deg}C. In this work, we use a modified atmospheric thermal oxidation…
Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the…
Control of thin film stoichiometry is of primary relevance to achieve desired functionality. Pulsed laser deposition ablating from binary-oxide targets (sequential deposition) can be applied to precisely control the film composition,…
We present a systematic growth study of epitaxial RuO$_2$(110) and IrO$_2$(110) on TiO$_2$(110) substrates by pulsed laser deposition. We describe the main challenges encountered in the growth process, such as a deteriorating material flux…