Related papers: Magnetic stray fields in nanoscale magnetic tunnel…
We use a scanning nanometer-scale superconducting quantum interference device to map the stray magnetic field produced by individual ferromagnetic nanotubes (FNTs) as a function of applied magnetic field. The images are taken as each FNT is…
An artificial spin ice consisting of numerous ferromagnets has attracted attention because of its applicability to practical devices. The ferromagnets interact through their stray magnetic field and show various functionality. The…
We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local…
We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel…
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect…
The problem of the observable equilibrium domain structure in pure antiferromagnets (and other thermoelastics) is investigated with the use of continuous elasticity theory. It is shown that completely rigid surface produces the imaginary…
We compute the local spectrum of the magnetic field near a metallic microstructure at finite temperature. Our main focus is on deviations from a plane-layered geometry for which we review the main properties. Arbitrary geometries are…
Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…
Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain…
Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful…
The anomalous Nernst effect in nanostructured magnetic materials is a key phenomenon to optimally control and employ the internal energy dissipated in electronic devices, being dependent on for instance the magnetic anisotropy of the active…
We present new analytical calculations of the spatial dependence of the stray field of a bistable magnetic wire from the magnetization profile of the wire. Contributions from the outer shell and from the wire ends are neglected. The results…
Stripe domains are studied in perpendicular magnetic anisotropy films nanostructured with a periodic thickness modulation that induces the lateral modulation of both stripe periods and inplane magnetization. The resulting system is the 2D…
The symmetry breaking inevitably present in the vicinity of any surface, namely an inversion center disappears in surface normal direction and only axes and planes normal to the surface conserve, gives rise to the spontaneous piezomagnetic,…
We report on the influence of stray fields for both low and high magnetic fields applied parallel to trilayers consisting of a low-T Nb interlayer and two outer Ni Fe layers having in-plane anisotropy. At low magnetic fields these trilayers…
The paper presents a computational study of the ground-state magnetic phases of a selected bilayer graphene nanoflake in external electric field and magnetic field. The electric field has parallel and perpendicular component while the…
We proposed a novel multilayer structure to realize the deterministic switching of perpendicularly magnetized layers by spin orbital torque from the spin Hall effect through stray field engineering. In our design, a pinned magnetic layer is…
Magnetic domain memory (MDM) is the ability exhibited by certain magnetic materials to reproduce the exact same nanoscale magnetic domain pattern, even after it has been completely erased by an external magnetic field. In this chapter, we…
A detailed numerical analysis of the magnetization reversal processes in multisegmented nanowire arrays was developed. The nanowires have a long aspect ratio and are formed by magnetic and non-magnetic sections alternately arranged in such…
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures. In this report a comprehensive study of the influence…