Related papers: Strain measurement in semiconductor FinFET devices…
Phase Measuring Deflectometry (PMD) acquires the two components of the local surface gradient via a sequence of two orthogonal sinusoidal fringe patterns that have to be displayed and captured separately. We will demonstrate that the…
A shearing interferometer is presented which uses polarization control to shear the wavefront and to modulate the interference pattern. The shear is generated by spatial walk-off in a birefringent crystal. By adjusting the orientation of…
Advancements in fast electron detectors have enabled the statistically significant sampling of crystal structures on the nanometre scale by means of Scanning Electron Nanobeam Diffraction (SEND). Characterisation of structural similarity…
We show that diffraction intensity into the First Order Laue Zone (FOLZ) of a crystal can have a strong azimuthal dependence, where this FOLZ ring appears solely because of unidirectional atom position modulation. Such a modulation was…
Fringe pattern based measurement techniques are the state-of-the-art in full-field optical metrology. They are crucial both in macroscale, e.g., fringe projection profilometry, and microscale, e.g., label-free quantitative phase microscopy.…
Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through…
We report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and…
Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…
We measure the motional fluctuations of a micromechanical mirror using a Michelson interferometer, and demonstrate its interferometric stability. The position stability of the micromirror is dominated by the thermal mechanical noise of the…
A semiconductor tracker for muon scattering tomography is presented. The tracker contains silicon strip sensors with an $80\,\mu$m pitch, precision mechanics and integrated cooling. The electronic readout of the sensors is performed by a…
Ultrafast-optical-pump -- structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying…
Mechanical strain is a powerful tool to tune the optical and optoelectronic properties of atomically thin semiconductors. Inhomogeneous strain plays an important role in exciton funneling and the activation of single-photon emitters in 2D…
Plastic deformation of micron-scale crystalline materials differ considerably from bulk ones, because it is characterized by random strain bursts. To obtain a detailed picture about this stochastic phenomenon, micron sized pillars have been…
We compare two transmission electron microscopy (TEM) based techniques that can provide highly spatially resolved quantitative measurements of magnetic induction fields at high sensitivity. To this end, the magnetic induction of a…
Here we report nonlinear focal modulation microscopy (NFOMM) to achieve super-resolution imaging. Abandoning the previous persistence on minimizing the size of Gaussian emission pattern by directly narrowing (e.g. Minimizing the detection…
Future complementary metal oxide semiconductor (CMOS) scaling for advanced integrated circuit (IC) technologies may well depend on "More than Moore" (MtM) approaches using heterogeneous integration of semiconductor-based devices. In order…
The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is…
Moir\'e superlattices can induce correlated-electronic phases in twisted van-der-Waals materials. Strongly correlated quantum phenomena emerge, such as superconductivity and the Mott-insulating state. However, moir\'e superlattices produced…
White beam x-ray Laue microdiffraction allows fast mapping of crystal orientation and strain fields in polycrystals, with a submicron spatial resolution in two dimensions. In the well crystallized parts of the grains, the analysis of Laue…
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…