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Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction…

Designing two-dimensional (2D) Rashba semiconductors, exploring the underlying mechanism of Rashba effect, and further proposing efficient and controllable approaches are crucial for the development of spintronics. On the basis of…

Mesoscale and Nanoscale Physics · Physics 2025-01-10 Haipeng Wu , Qikun Tian , Jinghui Wei , Ziyu Xing , Guangzhao Qin , Zhenzhen Qin

The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…

Materials Science · Physics 2012-02-15 M. S. Bahramy , B. -J. Yang , R. Arita , N. Nagaosa

One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable…

Materials Science · Physics 2018-06-29 Paul Z. Hanakata , A. S. Rodin , Harold S. Park , David K. Campbell , A. H. Castro Neto

The anisotropic Rashba effect allows for the manipulation of electron spins in a more precise and tunable manner since the magnitude of the Rashba splitting and orientation of the spin textures can be simply controlled by tuning the…

Materials Science · Physics 2023-10-30 Arif Lukmantoro , Moh. Adhib Ulil Absor

BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…

Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of…

Materials Science · Physics 2024-05-06 Na Hyun Jo , Elena Gati , Heike Pfau

Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron…

Spin splitting of Rashba states in two-dimensional electron system provides a promising mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by…

Materials Science · Physics 2015-12-22 Wenmei Ming , Z. F. Wang , Miao Zhou , Mina Yoon , Feng Liu

The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…

3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D…

Materials Science · Physics 2013-03-19 Manabu Kanou , Takao Sasagawa

Manipulating the optical and quantum properties of two-dimensional (2D) materials through strain engineering is not only fundamentally interesting but also provides significant benefits across various applications. In this work, we employ…

Materials Science · Physics 2025-09-23 Nguyen Tuan Hung , Vuong Van Thanh , Mingda Li , Takahiro Shimada

We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…

Structural, electronic, ferroelectric, and optical properties of two-dimensional (2D) BiN monolayer material with phosphorene-like structure are studied in terms of the density functional theory and modern Berry phase ferroelectric method.…

Materials Science · Physics 2017-11-28 Peng Chen , Xue-Jing Zhang , Bang-Gui Liu

It was recently shown that BiTeI, a semiconductor with polar crystal structure, possesses a giant spin-splitting of electrons, which has been interpreted in terms of Rashba-type spin-orbit coupling. Here, we use high field magneto-optical…

Mesoscale and Nanoscale Physics · Physics 2019-10-16 S. Bordacs , M. Orlita , M. Sikula , H. Murakawa , Y. Tokura

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects. This concept exploits the spin-layer locking mechanism present in centrosymmetric materials…

Materials Science · Physics 2021-09-08 Rong Zhang , Antimo Marrazzo , Matthieu Verstraete , Nicola Marzari , Thibault Sohier

Two-dimensional materials with Rashba split bands near the Fermi level are key to developing upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here,…

Materials Science · Physics 2023-10-19 Muhammad Zubair , Igor Evangelista , Shoaib Khalid , Bharat Medasani , Anderson Janotti

Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides…

Mesoscale and Nanoscale Physics · Physics 2021-11-15 Thorsten Aull , Igor V. Maznichenko , Sergey Ostanin , Ersoy Şaşıoğlu , Ingrid Mertig

At ambient pressure, BiTeI is the first material found to exhibit a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher…

The two-dimensional (2D) MA2Z4 family has received extensive attention in manipulating its electronic structure and achieving intriguing physical properties. However, engineering the electronic properties remains a challenge. Herein, based…

Materials Science · Physics 2023-08-17 Puxuan Li , Xuan Wang , Haoyu Wang , Qikun Tian , Jinyuan Xu , Linfeng Yu , Guangzhao Qin , Zhenzhen Qin
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