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By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy,…

Statistical Mechanics · Physics 2009-11-10 P. J. Jensen , H. Dreysse

VO2 features concomitant structural and metal-insulator transitions. This poses a challenge for understanding the underlying mechanism: is the transition triggered by a structural or by an electronic instability? The two scenarios are…

In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van…

Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control…

Materials Science · Physics 2020-12-21 Min-Han Lee , Yoav Kalcheim , Javier del Valle , Ivan K. Schuller

Magnetic phase transitions have been explored in a superlattice formed by stacking monolayers of $\rm LaTiO_{3}$ and $\rm LaVO_{3}$ alternately, using ab-initio density functional theory (DFT) and Monte-Carlo (MC) simulations. DFT derived…

Computational Physics · Physics 2022-05-10 Mukesh Sharma , Tulika Maitra

V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the…

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering…

We report on a general principle using the interlayer exchange coupling to extend the regime of chiral magnetic films in which stable or metastable magnetic skyrmions can appear at zero magnetic field. We verify this concept on the basis of…

Materials Science · Physics 2016-05-25 Ashis Kumar Nandy , Nikolai S. Kiselev , Stefan Blügel

Hydrogen-associated filling-controlled Mottronics within electron-correlated system provides a groundbreaking paradigm to explore exotic physical functionality and phenomena. Dynamically controlling hydrogen-induced phase transitions…

Strongly Correlated Electrons · Physics 2025-10-23 Xuanchi Zhou , Xiaohui Yao , Wentian Lu , Jinjian Guo , Jiahui Ji , Lili Lang , Guowei Zhou , Chunwei Yao , Xiaomei Qiao , Huihui Ji , Zhe Yuan , Xiaohong Xu

Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium…

Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…

Mesoscale and Nanoscale Physics · Physics 2019-09-04 Martin Stier , Jennifer Erdmann , Michael Thorwart

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase…

Strongly Correlated Electrons · Physics 2024-06-12 P. Homm , M. Menghini , J. W. Seo , S. Peters , J. -P. Locquet

The coupling between structural, electronic and magnetic degrees of freedom across the metal-insulator transition in V2O3 makes it hard to determine the main driving mechanism behind the transition. Specifically, the role of magnetism has…

Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the…

Materials Science · Physics 2021-10-13 Kun Han , Hanyu Wang , Liang Wu , Yu Cao , Dong-Chen Qi , Changjian Li , Zhen Huang , Xiao Li , X. Renshaw Wang

Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for…

The interlayer exchange coupling mediated by valence band electrons in all-semiconductor IV-VI magnetic/nonmagnetic superlattices is studied theoretically. A 3D tight-binding model, accounting for the band and magnetic structure of the…

Condensed Matter · Physics 2009-10-31 J. Blinowski , P. Kacman

Efficient magnetic switching is a cornerstone for advancing spintronics, particularly for energy-efficient data storage and memory devices. Here, we report the electrical switching of spin-flips in V-doped WSe2 multilayers, a van der Waals…

Two-dimensional multiferroics promise low-power, multifunctional devices, yet the intrinsic coexistence and mutual control of three coupled ferroic orders in a single layer remains elusive. Here, we identify pentagonal monolayer FeO$_2$ as…

Materials Science · Physics 2025-11-26 Deping Guo , Jiaqi Dai , Renhong Wang , Cong Wang , Wei Ji

We study the critical properties of a two--dimensional Ising model with competing ferromagnetic exchange and dipolar interactions, which models an ultra-thin magnetic film with high out--of--plane anisotropy in the monolayer limit. We…

Statistical Mechanics · Physics 2009-11-11 S. A. Cannas , M. F. Michelon , D. A. Stariolo , F. A. Tamarit

Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated…