Related papers: Disorder effects in InAs/GaSb topological insulato…
In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's…
We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. Such systems consist of quantum-wells of two different thicknesses randomly distributed along the growth…
Disorder inevitably exists in realistic samples, manifesting itself in various exotic properties for the topological states. In this paper, we summarize and briefly review work completed over the last few years, including our own, regarding…
We examine the effects of interface roughness and/or planar impurity doping in a superlattice, in the frame of a weak disorder description. We find that these two types of disorder are equivalent, and that they can be viewed as effective…
We study the nature of the disorder-induced quantized conductance, i.e., the phenomena of topological Anderson insulator (TAI) induced in HgTe/CdTe semiconductor quantum well. The disorder effect in several different systems where anomalous…
Disorder effects on three-dimensional second-order topological insulators (3DSOTIs) are investigated numerically and analytically. The study is based on a tight-binding Hamiltonian for non-interacting electrons on a cubic lattice with a…
We study transport properties and topological phase transition in two-dimensional interacting disordered systems. Within dynamical mean-field theory, we derive the Hall conductance, which is quantized and serves as a topological invariant…
We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide…
We analyze equilibrium properties of coupled-doped cavities described by the Jaynes-Cummings- Hubbard Hamiltonian. In particular, we characterize the entanglement of the system in relation to the insulating-superfluid phase transition. We…
A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells (QW). The model provides excellent agreement to experimental observations on various structures. This study clarifies…
Intersubband absorption in modulation-doped quantum wells is usually appropriately described as a collective excitation of the confined two-dimensional electron gas. At sufficiently low electron density and low temperatures, however, the…
Disorder can profoundly affect the transport properties of a wide range of quantum materials. Presently, there is significant disagreement regarding the effect of disorder on transport in the disordered Bose-Hubbard (DBH) model, which is…
We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction band. We show that when…
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…
The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk…
The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report hybrid density functional theory based calculations of the…
In order to manipulate the properties of graphene, its very important to understand the electronic structure in presence of disorder. We investigate, within a tight-binding description, the effects of disorder in the on-site (diagonal…
Impurities and defects are ubiquitous in topological insulators (TIs) and thus understanding the effects of disorder on electronic transport is important. We calculate the distribution of the random conductance fluctuations $P(G)$ of…
By using the self-consistent Born approximation, we investigate topological phase transitions in double HgTe quantum wells (QWs) induced by the short-range impurities. Following the evolution of the density-of-states and the spectral…
We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we…