Related papers: Measurements of capacitive coupling within a quadr…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…
We investigate a method for entangling two singlet-triplet qubits in adjacent double quantum dots via capacitive interactions. In contrast to prior work, here we focus on a regime with strong interactions between the qubits. The interplay…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be…
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…
We have realized a tunable coupling over a large frequency range between an asymmetric Cooper pair transistor (charge qubit) and a dc SQUID (phase qubit). Our circuit enables the independent manipulation of the quantum states of each qubit…
We have carried out spectroscopic measurements of a system of three strongly coupled four-junction flux qubits. The samples studied cover a wide range of parameters with the coupling energy between neighboring qubits varying between 0.75…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We propose a scheme for tunable coupling of phase-coupled flux qubits. The phase-coupling scheme can provide a strong coupling strength of the order of Josephson coupling energy of Josephson junctions in the connecting loop, while the…
In the singlet-triplet qubit architecture, the two-qubit interactions required in universal quantum computing can be implemented by capacitative coupling, by exploiting the charge distribution differences of the singlet and triplet states.…
We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for…
We study two quantum dots in the limit of strong dot-lead coupling and weak dot-dot tunneling. The model maps on Ising-coupled Kondo impurities. We argue that a new quantum critical fixed point exists at an intermediate value of the mutual…
Gate-defined quantum dots (QDs) have appealing attributes as a quantum computing platform. However, near-term devices possess a range of possible imperfections that need to be accounted for during the tuning and operation of QD devices. One…