Related papers: Low-frequency charge noise in Si/SiGe quantum dots
We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…
Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise…
Low-frequency $1/f^{\gamma}$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant…
We theoretically investigate the charge noise and dephasing in a metallic device in close proximity to a spin incoherent Luttinger liquid with a small but finite current. The frequency dependence of the charge noise exhibits a loss of…
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise…
In quantum computing, characterizing the full noise profile of qubits can aid in increasing coherence times and fidelities by developing error-mitigating techniques specific to the noise present. This characterization also supports efforts…
Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear…
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we…
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit…
In this paper we study the low temperature kinetics of the electrons in the system composed of a quantum dot connected to two leads by solving the equation of motion. The decoherence and the relaxation of the system caused by the gate…
The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical…
We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local…
Cross-correlated noise measurements are performed in etched Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings in equilibrium at bath temperature of $T_\text{bath}=4.2\text{ K}$. The measured white noise exceeds the thermal…
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic…
A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal…
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S_V=2eIR^2coth(eV/2kT), for two voltage…
Several experiments have shown qubit coherence decay of the form $\mathrm{exp}[-(t/T_2)^\alpha]$ due to environmental charge-noise fluctuations. We present a microscopic description for temperature dependences of the parameters $T_2$ and…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
Noise from material defects at device interfaces is known to limit the coherence of superconducting circuits, yet our understanding of the defect origins and noise mechanisms remains incomplete. Here we investigate the temperature and…