Related papers: Two-dimensional hole transport in ion-gated diamon…
Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a…
Hole doping can control the conductivity of diamond either through boron substitution, or carrier accumulation in a field-effect transistor. In this work, we combine the two methods to investigate the insulator-to-metal transition at the…
Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent…
The observation of strong and tunable spin-orbit interaction (SOI) in surface conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior…
Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface…
Surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions are summarized. The formation of a conductive layer at the surface of diamond is discussed based on Hall effect,…
Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, non-polar optical phonons, and acoustic…
A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…
In this letter, we report the effects of irradiating hydrogen-terminated diamond surfaces with protons. We study the electrical behavior of the two-dimensional hole gas that forms on the diamond surface as a result of hydrogen-termination.…
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance…
We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating…
We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated $(111)$ diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface…
We report the observation of electric-field-induced superconductivity on the surface of bulk polycrystalline MoS2 using electric double-layer doping. A gate voltage applied in an ionic liquid environment systematically increased carrier…
Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…