Related papers: Current-Induced magnetization switching by the hig…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have…
Co$_{3}$Sn$_{2}$S$_{2}$ (CSS) is one of the shandite compounds and becomes a magnetic Weyl semimetal candidate below the ferromagnetic phase transition temperature ($\textit{T}_\textrm{C}$). In this paper, we investigate the temperature…
The electrical manipulation of magnetization by current-induced spin torques has given access to realize a plethora of ultralow power and fast spintronic devices such as non-volatile magnetic memories, spin-torque nano-oscillators, and…
Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In…
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators,…
CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a…
The use of current-generated spin-orbit torques[1] to drive magnetization dynamics is under investigation to enable a new generation of non-volatile, low-power magnetic memory. Previous research has focused on spin-orbit torques generated…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
Efficient spin/charge interconversion is desired to develop innovative spin-based devices. So far, the interconversion has been performed by using heavy atomic elements, strong spin-orbit interaction of which realizes the interconversion…
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is…
Despite the remarkable efforts in the past two decades, it has remained a major challenge to achieve switching of perpendicularly magnetized spin-orbit torque devices in a scalable, energy-efficient, field-free, integration-friendly, and…
We have studied the interaction between magnetism and superconductivity in a pseudo-spin-valve structure consisting of a Co/Cu/Py/Nb layer sequence. We are able to control the magnetization reversal process and monitor it by means of the…
We theoretically investigate the mechanism to generate large intrinsic spin Hall effect in iridates or more broadly in 5d transition metal oxides with strong spin-orbit coupling. We demonstrate such a possibility by taking the example of…
We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different…
We investigate torque and also conventionally defined spin-Hall currents in two-dimensional (2D) spin-orbit coupled systems of spin-1/2 particles within the linear response Kubo formalism. We obtain some interesting relations between the…
The current-induced spin-orbit torque-based devices for magnetization switching are commonly relied on the 4d and 5d heavy metals owing to their strong spin-orbit coupling (SOC) to produce large spin current via spin Hall effect (SHE). Here…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…