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Related papers: SrTiO$_3$ termination control: A method to tailor …

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We report on surface effects on the electronic properties of interfaces in epitaxial LaAlO$_3$/SrTiO$_3$ heterostructures. Our results are based on first-principles electronic structure calculations for well-relaxed multilayer…

Materials Science · Physics 2009-11-13 U. Schwingenschloegl , C. Schuster

The defect stability in a prototypical perovskite oxide superlattice consisting of SrTiO$_3$ and PbTiO$_3$ (STO/PTO) is determined using first principles density functional theory calculations. Specifically, the oxygen vacancy formation…

Vacancy dynamics in oxides are vital for understanding redox reactions and resulting memristive effects or catalytic activity. We present a method to track and drive vacancies which we apply to metadynamics simulation of oxygen vacancies…

Materials Science · Physics 2013-12-19 Jan M. Knaup , Michael Wehlau , Thomas Frauenheim

The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions.…

Materials Science · Physics 2019-06-04 A. H. Al-Tawhid , J. R. Frick , D. B. Dougherty , D. P. Kumah

The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and…

By using DFT+U, we explore the formation of oxygen vacancies and their impact on the electronic and magnetic structure in strained bulk LaNiO3 and (LaNiO3)$_1$/(LaAlO3)$_1$(001) superlattices. For bulk LaNiO3, we find that epitaxial strain…

Superconductivity · Physics 2023-02-02 Benjamin Geisler , Simon Follmann , Rossitza Pentcheva

Thin films of V2O3 have been grown on Au(111) and W(110). It is possible to prepare two different surface terminations: the first one is vanadium terminated whereas the second one exhibits additional oxygen atoms, forming vanadyl groups…

Other Condensed Matter · Physics 2007-05-23 Anne-Claire Dupuis

First-principles total-energy calculations are carried out for (001) surfaces of the cubic perovskite ATiO3 compounds PbTiO3, BaTiO3, and SrTiO3. Both AO-terminated and TiO2-terminated surfaces are considered, and fully-relaxed atomic…

Materials Science · Physics 2015-06-25 B. Meyer , J. Padilla , David Vanderbilt

Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still…

We investigated SrFeO$_{3-x}$ thin films on a SrTiO$_3$ (001) substrate prepared via pulsed laser epitaxy using an optical spectroscopy technique. The oxygen vacancy level ($x$) was controlled by post-annealing processes at different oxygen…

Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks…

Mesoscale and Nanoscale Physics · Physics 2017-09-28 Andrew L. Yeats , Peter J. Mintun , Yu Pan , Anthony Richardella , Bob B. Buckley , Nitin Samarth , David D. Awschalom

In many transition metal oxides (TMOs), oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling…

Materials Science · Physics 2016-02-12 Ho Nyung Lee , Sung S. Ambrose Seo , Woo Seok Choi , Christopher M. Rouleau

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential…

Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in…

Oxide interfaces feature unique two-dimensional (2D) electronic systems with diverse electronic properties such as tunable spin-orbit interaction and superconductivity. Conductivity emerges in these interfaces when the thickness of an…

Superconductivity · Physics 2024-02-23 I. Silber , A. Azulay , A. Basha , D. Ketchker , M. Baskin , A. Yagoda , L. Kornblum , A. Kohn , Y. Dagan

We report on the observation of metallic behavior in thin films of oxygen-deficient SrTiO$_3$ - down to 9 unit cells - when coherently strained on (001) SrTiO$_3$ or DyScO$_3$-buffered (001) SrTiO$_3$ substrates. These films have carrier…

Materials Science · Physics 2016-06-06 Purnima P. Balakrishnan , Urusa S. Alaan , Matthew T. Gray , Yuri Suzuki

Electron-beam deposition of an insulating granular aluminium or of an off-stoichiometric amorphous alumina layer on a $SrTiO_3$ surface is a simple way to get a metallic interface from insulating materials. No heating nor specific…

Materials Science · Physics 2016-09-21 Julien Delahaye , Thierry Grenet

The great potential of memristive devices for real-world applications still relies on overcoming key technical challenges, including the need for a larger number of stable resistance states, faster switching speeds, lower SET/RESET…

We report surface reconstruction (RC)-dependent growths of SrTiO3 and SrVO3 on a SrTiO3 (001) surface with two different coexisting surface RCs, namely (2x1) and c(6x2). Up to the coverage of several layers, epitaxial growth was forbidden…

Materials Science · Physics 2011-04-25 Soo-hyon Phark , Young Jun Chang , Tae Won Noh

Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present…

Materials Science · Physics 2015-06-12 R. Peng , H. C. Xu , M. Xia , J. F. Zhao , X. Xie , D. F. Xu , B. P. Xie , D. L. Feng