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Related papers: Strain-tunable magnetic order and electronic struc…

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Cr$_{1+x}$Te$_2$ is a self-intercalated vdW system that is of current interest for its room-temperature FM phases and tunable topological properties. Early NPD measurements on the monoclinic phase Cr$_3$Te$_4$ ($x=0.5$) presented evidence…

Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…

Mesoscale and Nanoscale Physics · Physics 2024-05-29 P. D. Grigoriev , N. S. Pavlov , I. A. Nekrasov , I. R. Shein , A. V. Sadakov , O. A. Sobolevskiy , E. Maltsev , N. Perez , L. Veyrat , V. M. Pudalov

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

Materials Science · Physics 2018-07-04 Igor Neri , Miquel López-Suárez

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…

Materials Science · Physics 2015-06-22 Swastibrata Bhattacharyya , Tribhuwan Pandey , Abhishek K. Singh

${\it Ab}$ ${\it initio}$ electronic structure calculations reveal that tetragonal distortion has a dramatic effect on the relative stability of the various magnetic structures (C-, A-, G-, A$'$-AFM, and FM) of FeRh giving rise to a wide…

Materials Science · Physics 2016-11-30 Jinwoong Kim , R. Ramesh , Nicholas Kioussis

Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic…

Altermagnets (AMs) are an emergent class of magnetic materials that combine properties of ferromagnets and antiferromagnets, exhibiting spin-polarized Fermi surfaces and zero net magnetic moment due to combined time-reversal and crystal…

Mesoscale and Nanoscale Physics · Physics 2025-10-01 Zesen Fu , Mengli Hu , Aolin Li , Haiming Duan , Junwei Liu , Fangping Ouyang

The recent isolation of two-dimensional (2D) magnets offers tantalizing opportunities for spintronics and magnonics at the limit of miniaturization. One of the key advantages of atomically-thin materials is their outstanding deformation…

Materials Science · Physics 2022-11-23 Dorye L. Esteras , Andrey Rybakov , Alberto M. Ruiz , José J. Baldoví

We study the effect of crystal superstructures, produced by orientational ordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organic conductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistance oscillations…

Strongly Correlated Electrons · Physics 2008-10-02 Anand Banerjee , Victor M. Yakovenko

A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…

Quantum conductance calculations on the mechanically deformed monolayers of MoS$_2$ and WS$_2$ were performed using the non-equlibrium Green's functions method combined with the Landauer-B\"{u}ttiker approach for ballistic transport…

Materials Science · Physics 2014-03-04 Mahdi Ghorbani-Asl , Stefano Borini , Agnieszka Kuc , Thomas Heine

By systematic first-principles calculations, we study the electronic structure and magnetic property of SrCrO$_3$. Our results suggest that SrCrO$_3$ is a weakly correlated antiferromagnetic (AF) metal, a very rare situation in…

Materials Science · Physics 2010-07-20 Guangtao Wang , Zhi Li , C. Q. Jin , Zhong Fang

Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile…

In the field of 2D materials, transition metal dichalcogenides (TMDs) are gaining attention for electronic applications. Our study delves into the H-phase monolayer VS$_2$ of the TMD family, analyzing its electronic structure and how strain…

Materials Science · Physics 2024-01-18 Oguzhan Orhan , Şener Özönder , Soner Ozgen

To elucidate the magnetic structure and the origin of the nematicity in FeSe, we perform a high-pressure $^{77}$Se NMR study on FeSe single crystals. We find a suppression of the structural transition temperature with pressure up to about 2…

Superconductivity · Physics 2016-12-05 P. S. Wang , S. S. Sun , Y. Cui , W. H. Song , T. R. Li , Rong Yu , Hechang Lei , Weiqiang Yu

The ability to control magnetism with strain offers innovative pathways for the modulation of magnetic domain configurations and for the manipulation of magnetic states in materials on the nanoscale. Although the effect of strain on…

Using first-principles calculations based on the density functional theory, we show a strong strain dependence of magnetic order in (LaMnO$_{3}$)$_n$/(SrMnO$_{3}$)$_{2n}$ (001) superlattices with $n=1,2$. The epitaxial strain lifts the…

Strongly Correlated Electrons · Physics 2015-06-11 Qinfang Zhang , Shuai Dong , Baolin Wang , Seiji Yunoki

Recent observation of intrinsic ferromagnetism in two-dimensional (2D) CrI$_3$ is associated with the large magnetic anisotropy due to strong spin-orbit coupling (SOC) of I. Magnetic anisotropy energy (MAE) defines the stability of…

Mesoscale and Nanoscale Physics · Physics 2018-10-10 Lucas Webster , Jia-An Yan

Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches the understanding regarding two-dimensional (2D) magnetic orders and holds special virtues over ferromagnetism in spintronic applications. However, the…

Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 Z. H. Zhou , B. C. Wei , Y. M. Min , L. Z. Liu