Related papers: Helical quantum Hall phase in graphene on SrTiO$_3…
We study many-body ground states for the partial integer fillings of the $N=1$ Landau level in graphene, by constructing a model that accounts for the lattice scale corrections to the Coulomb interactions. Interestingly, in contrast to the…
Graphene subject to a strong, tilted magnetic field exhibits an insulator-metal transition tunable by tilt-angle, attributed to the transition from a canted antiferromagnetic (CAF) to a ferromagnetic (FM) bulk state at filling factor zero.…
In the recent advancement in graphene heterostructures, it is possible to create a double layer tunnel decoupled graphene system that has a strong interlayer electronic interaction. In this work, we restrict the parameters in the low energy…
We report on magneto-transport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the twelve-fold degeneracy…
Following the recent proposal by Weeks et al., which suggested that indium (or thallium) adatoms deposited on the surface of graphene should turn the latter into a quantum spin Hall (QSH) insulator characterized by a sizeable gap, we…
We consider a class of {\em quantum Hall topological insulators}: topologically nontrivial states with zero Chern number at finite magnetic field, in which the counter-propagating edge states are protected by a symmetry (spatial or spin)…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is…
Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of graphene-Sb2Te3 heterostructure…
We propose a novel realization for a topologically superconducting phase hosting Majorana zero-modes on the basis of quantum spin Hall systems. Remarkably, our proposal is completely free of ferromagnets. Instead, we confine helical edge…
Magnetotransport of conventional semiconductor based double layer systems with barrier suppressed interlayer tunneling has been a rewarding subject due to the emergence of an interlayer coherent state that behaves as an excitonic…
A topological insulator is characterized by a dichotomy between the interior and the edge of a finite system: While the bulk has a non-zero energy gap, the edges are forced to sustain excitations traversing these gaps. Originally proposed…
Topological quantum numbers are often used to characterise the topological order of phase having protected gapless edge modes when the system is kept in a space with the boundary. The famous examples in this category are the quantized…
Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental…
Hole-conjugate states of the fractional quantum Hall effect host counter-propagating edge channels which are thought to exchange charge and energy. These exchanges have been the subject of extensive theoretical and experimental works; in…
We investigate the emergence of anti-ferromagnetic ordering and its effect on the helical edge states in a quantum spin Hall insulator, in the presence of strong Coulomb interaction. Using dynamical mean-field theory, we show that the…
Magnetic fields quench the kinetic energy of two dimensional electrons, confining them to highly degenerate Landau levels. In the absence of disorder, the ground state at partial Landau level filling is determined only by Coulomb…
The helical edge states in a quantum spin Hall insulator are presumably protected by time- reversal symmetry. However, even in the presence of magnetic field which breaks time-reversal symmetry, the helical edge conduction can still exist,…
Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO…
The integration of topological insulators (TIs) with graphene offers a pathway to engineer hybrid quantum states, yet the impact of strain at the 2D limit remains a critical open question. Here, we investigate the structural properties of…
The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of…