Related papers: Hole-Spin-Echo Envelope Modulations
We report results of 57Fe Mossbauer and 31P NMR studies of a phosphide FeP powder sample performed in a wide temperature range including the point (TN ~ 120 K) of magnetic phase transitions. The 57Fe Mossbauer spectra at low temperatures T…
A new method for detecting the magnetic resonance of electronic spins at low temperature is demonstrated. It consists in measuring the signal emitted by the spins with a superconducting qubit that acts as a single-microwave-photon detector,…
We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}$Si site; (ii) the isotropic term is over 30 times larger…
The negatively charged boron vacancy center in 2D hexagonal boron nitride has emerged as a promising quantum sensor. However, its sensitivity is constrained due to ubiquitous nuclear spins in the environment. The nuclear spins, hyperfine…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
We theoretically investigate the quasiparticle (polaron) properties of an impurity immersing in a Bose-Einstein condensate with equal Rashba and Dresselhaus spin-orbit coupling at zero temperature. In the presence of spin-orbit coupling,…
Electric fields are increasingly used for coherently manipulating spin states in semiconductor and molecular systems. Here we discuss the spin manipulation allowed by the modulation of the main parameters entering the Hamiltonians of…
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor…
Highly confined "spoof" surface plasmon-like (SSP) modes are theoretically predicted to exist in a perforated metal film coated with a thin dielectric layer. Strong modes confinement results from the additional waveguiding by the layer.…
Nuclear magnetic resonance (NMR) and transport measurements have been performed at high magnetic fields and low temperatures in a series of $n$-type Bi$_{2}$Se$_{3}$ crystals. In low density samples, a complete spin polarization of the…
The electron (hole) spin-photon interaction is studied in an asymmetrical InSb (Ge) nanowire quantum dot. The spin-orbit coupling in the quantum dot mediates not only a transverse spin-photon interaction, but also a longitudinal spin-photon…
Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses…
The development of a new era of quantum devices requires an understanding of how paramagnetic dopants or impurity spins behave in crystal hosts. Here, we describe a new spectroscopic technique which uses traditional Electron Spin Resonance…
Spin-phonon interactions have a dual role in emerging spin-based quantum technologies. While they can be a limitation to device performance through decoherence, they also serve as a critical resource for coherent spin control, detection,…
When a mobile hole is doped into an antiferromagnet, its movement will distort the surrounding magnetic order and yield a magnetic polaron. The resulting complex interplay of spin and charge degrees of freedom gives rise to very rich…
We present a detailed analysis of the Aharonov-Bohm interference oscillations manifested through transmission of an electron in a mesoscopic ring with a magnetic impurity atom inserted in one of its arms. The electron interacts with the…
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the…
Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and…
Optically addressable spin defects in hexagonal boron nitride hold promise for room-temperature quantum technologies, but their microscopic identities remain largely unknown. Using first principles calculations, we show that coupled spin…
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to…