Related papers: Quantum Nanophotonics with Group IV defects in Dia…
Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in…
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are…
Recently there has been much interest in using Group IV elements from the Periodic Table to fabricate and study X$V$ color centers in diamond where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy. These Group IV color centers have a…
Group-IV vacancy (G4V, or XV, where X = Si, Ge, Sn, Pb) color centers constitute a novel and promising class of defects in diamonds. This chapter reviews and refines the theoretical models for the XV systems, encompassing the intrinsic…
Silicon-vacancy (SiV$^-$) centers in diamond are promising candidates as sources of single-photons in quantum networks due to their minimal phonon coupling and narrow optical linewidths. Correlating SiV$^-$ emission with the defect's…
The past decade has seen great advances in developing color centers in diamond for sensing, quantum information processing, and tests of quantum foundations. Increasingly, the success of these applications as well as fundamental…
A fully integrated quantum optical technology requires active quantum systems incorporated into resonant optical microstructures and inter-connected in three dimensions via photonic wires. Nitrogen vacancy-centres (NV-centres) in diamond…
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a…
Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies due to their unique optical and spin properties. Reduction of the diamond host size to the nanoscale…
The nitrogen-vacancy (NV) colour centre in diamond is an important physical system for emergent quantum technologies, including quantum metrology, information processing and communications, as well as for various nanotechnologies, such as…
Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Due to the spatial localization of the defect states, these deep defects can be considered as…
The negatively charged nitrogen-vacancy (NV) center in diamond is a leading solid-state quantum emitter, offering spin-photon interfaces over a wide temperature range with applications from electromagnetic sensing to bioimaging. While NV…
Diamond has attracted great interest as a quantum technology platform thanks to its optically active nitrogen vacancy center (NV). The NV's ground state spin can be read out optically exhibiting long spin coherence times of about 1 ms even…
Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy (NV) center, are a promising platform with the potential to enable…
The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point…
Diamond colour centres are promising optically-addressable solid state spins that can be matter-qubits, mediate deterministic interaction between photons and act as single photon emitters. Useful quantum computers will comprise millions of…
A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as…
The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here we show that when silicon and nitrogen are simultaneously introduced…
This chapter covers recent developments in the field of hybrid quantum photonics based on color centers in nanodiamonds and Si3N4-photonics towards a technology platform with applications in quantum information processing and quantum…
Quantum emitters in diamond are leading optically-accessible solid-state qubits. Among these, Group IV-vacancy defect centers have attracted great interest as coherent and stable optical interfaces to long-lived spin states. Theory…