Related papers: Developing a mass-production model of large-area S…
The lithium-drifted silicon (Si(Li)) detector developed for the General Antiparticle Spectrometer (GAPS) experiment features a thick (~2.2 mm) sensitive layer, large (10 cm) diameter, and excellent energy resolution (~4 keV for 20-100 keV…
The first lithium-drifted silicon (Si(Li)) detectors to satisfy the unique geometric, performance, and cost requirements of the General Antiparticle Spectrometer (GAPS) experiment have been produced by Shimadzu Corporation. The GAPS Si(Li)…
Lithium-drifted silicon [Si(Li)] has been used for decades as an ionizing radiation detector in nuclear, particle, and astrophysical experiments, though such detectors have frequently been limited to small sizes (few cm$^2$) and cryogenic…
We have developed large-area lithium-drifted silicon (Si(Li)) detectors to meet the unique requirements of the General Antiparticle Spectrometer (GAPS) experiment. GAPS is an Antarctic balloon-borne mission scheduled for the first flight in…
Large-area lithium-drifted silicon (Si(Li)) detectors, operable 150{\deg}C above liquid nitrogen temperature, have been developed for the General Antiparticle Spectrometer (GAPS) balloon mission and will form the first such system to…
A Si(Li) detector fabrication procedure has been developed with the aim of satisfying the unique requirements of the GAPS (General Antiparticle Spectrometer) experiment. Si(Li) detectors are particularly well-suited to the GAPS detection…
This work evaluates the viability of polyimide and parylene-C for passivation of lithium-drifted silicon (Si(Li)) detectors. The passivated Si(Li) detectors will form the particle tracker and X-ray detector of the General Antiparticle…
The detection efficiency and response function of a Si(Li) detector element for the SIXA spectrometer have been determined in the 500 eV to 5 keV energy range using synchrotron radiation emitted at a bending magnet of the electron storage…
Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing…
We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm ,…
Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in…
Prototype of gamma ray detector based on Micro Pixel Avalanche Photodiodes (MAPD) with high pixel density 15000 pixel/$mm^2$, optically coupled to Lutetium Fine Silicate (LFS) scintillator has been developed. The detection performance…
The baseline energy-resolution performance for the current generation of large-mass, low-temperature calorimeters (utilizing TES and NTD sensor technologies) is $>2$ orders of magnitude worse than theoretical predictions. A detailed study…
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…
Fabrication of diode by forming n-type electrical contact on germanium (Ge) and its AC impedance analysis is important for radiation detection in the form of pulses. In this work lithium (Li) metal has been electro-deposited on p-type Ge…
In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…
0.2 um fully-depleted SOI technology has been developed a for X-ray pixel detectors. To improve the detector performance, some advanced process technologies are developing continuously. To utilize the high resistivity FZ-SOI, slow ramp up…
The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure,…
The Low Gain Avalanche Diodes (LGADs) are promising particle detectors for timing resolution better than $50$ ps under a high radiation environment. This study investigates n-in-p LGAD architecture, focusing on ultra-thin sensors of…
We describe a process route to fabricate arrays of Ultra-low-Noise MoAu Transition Edge Sensors (TESs). The low thermal conductance required for space applications is achieved using 200 nm-thick Silicon Nitride (SiNx ) patterned to form…