Related papers: High bandwidth waveguide-integrated plasmonic germ…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of AW-1, and high speed on…
Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a…
The integration density of photonic integrated circuits has been limited by light coupling between waveguides. Traditional approaches to layout the waveguide with high density are based on refractive index engineering to suppress the light…
Metallic nanoslit arrays integrated on germanium metal-semiconductor-metal photodetectors show many folds of absorption enhancement for transverse-magnetic polarization in the telecommunication C-band. Such high enhancement is attributed to…
We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement, the result is an ultrafast, sub-diffraction, coherent light…
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production…
Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components…
High bandwidth and low dark current germanium (Ge) photodetectors are crucial in silicon photonic integrated circuits. The bandwidth of Ge photodetectors is restricted by carrier transit time and parasitic parameters. And thermal generation…
An efficient electro-optical modulation has been demonstrated here by using an edge plasmon mode specific for the hybrid plasmonic waveguide. Our approach addresses a major obstacle of the integrated microwave photonics caused by the…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
We present optical investigations of rectangular surface plasmon polariton waveguides lithographically defined on GaAs substrates. The plasmon propagation length is directly determined using a confocal microscope, with independent…
We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by…
The loss of surface plasmon polaritons has long been considered as a fatal shortcoming in information transport. Here we propose a plasmonic absorber utilizing this "shortcoming" to absorb the stray light in photonic integrated circuits…
Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a…
Chemical synthesized silver nanowires have been proved to be the efficient architecture for Plasmonic waveguides, but the high propagation loss prevents their widely applications. Here, we demonstrate that the propagation distance of the…
Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy,…
Optical interconnects have attracted significant research interest for use in short-reach board-level optical communication links in supercomputers and data centres. Multimode polymer waveguides in particular constitute an attractive…
We investigate the subwavelength imaging capacity of a two-dimensional fanned-out plasmonic waveguide array, formed by air channels surrounded by gold metal layers for operation at near-infrared wavelengths, via finite element simulations.…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…