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The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…
The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…
We theoretically investigate the generation of ultrafast currents in insulators induced by strong few-cycle laser pulses. Ab initio simulations based on time-dependent density functional theory give insight into the atomic-scale properties…
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a…
The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics. Using the simplified model for the interface electronic structure based on defects…
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the…
In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame…
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and…
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…
Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to…
Neutron and $\gamma$-ray irradiation damages to transistors are found to be non-additive, and this is denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The recent defect-based model [ACS Appl.…
The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The…
We develop a simple model to compute the energy-dependent decay factors of metal-induced gap states in metal/insulator interfaces considering the collective behaviour of all the bulk complex bands in the gap of the insulator. The agreement…
We develop a theory of polarized photoluminescence of interface excitons localized at lateral heterojunctions between transition metal dichalcogenide monolayers. We show that the circular selection rules governing interband optical…
The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the…
We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show…
In lithium ion batteries, Li+ intercalation and processes associated with passivation of electrodes are governed by applied voltages, which are in turn associated with free energy changes of Li+ transfer (Delta G_t) between the solid and…
This work characterizes a phenomenon in direct laser written directional couplers where the splitting ratio for output light is dependent on the input polarization state. In general, for laser written waveguides, different coupling…
Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the…
Negative feedback is a powerful approach capable of improving several aspects of a system. In linear electronics, it has been critical for allowing invariance to device properties. Negative feedback is also known to enhance linearity in…