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Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen…

We demonstrate a spin-based, all-dielectric electrometer based on an ensemble of nitrogen-vacancy (NV$^-$) defects in diamond. An applied electric field causes energy level shifts symmetrically away from the NV$^-$'s degenerate triplet…

Nitrogen-vacancy (NV) centers are defects in diamonds, which, due to their electronic structure, have been extensively studied as magnetic field sensors. Such field detection applications usually employ the NV centers to detect field…

Quantum Physics · Physics 2016-06-07 Shonali Dhingra , Brian D'Urso

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…

Mesoscale and Nanoscale Physics · Physics 2009-11-25 Max C. Lemme

As the ability to integrate single photon emitters into photonic architectures improves, so does the need to characterize and understand their interaction. Here, we use a scanning diamond nanocrystal to investigate the interplay between the…

Solid state spins in diamond, in particular negatively charged nitrogen-vacancy centers (NV), are leading contenders in the field of quantum sensing. While addressing of single NVs offers nanoscale spatial resolution, many implementations…

Quantum Physics · Physics 2023-01-11 Yuchun Zhu , Elena Losero , Christophe Galland , Valentin Goblot

Interfacial interactions are crucial in a variety of fields and can greatly affect the electric, magnetic, and chemical properties of materials. Among them, interface orbital hybridization plays a fundamental role in the properties of…

Magnetometers based on nitrogen-vacancy (NV) centers in diamond are promising room-temperature, solid-state sensors. However, their reported sensitivity to magnetic fields at low frequencies (<1 kHz) is presently >10 pT s^{1/2}, precluding…

We report measurements of optically detected magnetic resonance spectra of ensembles of negatively charged nitrogen-vacancy (NV) centers in diamonds in the presence of strain and DC external electric fields. The Stark shift of the spectral…

Atomic Physics · Physics 2018-02-27 Sarvagya Sharma , Chris Hovde , Douglas H. Beck , Fahad Alghannam

New magnetometry techniques based on Nitrogen-Vacancy (NV) defects in diamond allow for the imaging of static (DC) and oscillatory (AC) nanoscopic magnetic systems. However, these techniques require accurate knowledge and control of the…

Mesoscale and Nanoscale Physics · Physics 2009-11-26 Liam T. Hall , Charles D. Hill , Jared H. Cole , Lloyd C. L. Hollenberg

The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be…

The nitrogen vacancy (NV) center in diamond is a versatile color center used for magnetometry, quantum computing, and quantum communications. In this article, using a single laser beam as a pump and probe, we measure the spin states of the…

Applied Physics · Physics 2025-05-28 Reza Kashtiban , Gavin W. Morley , Mark E. Newton , A T M Anishur Rahman

Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…

Applied Physics · Physics 2025-09-05 Vinay Kammarchedu , Heshmat Asgharian , Hossein Chenani , Aida Ebrahimi

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…

Mesoscale and Nanoscale Physics · Physics 2016-11-18 I. Meric , C. R. Dean , A. F. Young , J. Hone , P. Kim , K. L. Shepard

The nitrogen-vacancy (NV) center in diamond exists in different charge states with distinct photoluminescence properties, which are sensitive to the nanoscale electrochemical environment. Hence, the NV charge state is emerging as a powerful…

Mesoscale and Nanoscale Physics · Physics 2026-05-12 Patrick Voorhoeve , Hiroshi Abe , Takeshi Ohshima , Qiang Sun , Anita Quigley , Rob Kapsa , Nikolai Dontschuk , Philipp Reineck

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Gianluca Fiori , S. Lebègue , A. Betti , P. Michetti , M. Klintenberg , O. Eriksson , Giuseppe Iannaccone

The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…

Nitrogen-vacancy centers in nanodiamond offer a microwave-free, noninvasive platform for probing superconductors via near zero-field cross-relaxation magnetometry. We demonstrate this by depositing nanodiamonds on YBCO thin films to measure…

A wide-field magnetometer utilizing nitrogen-vacancy (NV) centers in diamond that does not require microwaves is demonstrated. It is designed for applications where microwaves need to be avoided, such as magnetic imaging of biological or…