Related papers: Inversion symmetric non-Hermitian Chern insulator
We propose a non-Hermitian topological system protected by the generalized rotational symmetry which invokes rotation in space and Hermitian conjugation. The system, described by the tight-binding model with nonreciprocal hopping, is found…
In commonly employed models for 2D topological insulators, bulk gapless states are well known to form at the band inversion points where the degeneracy of the states is protected by symmetries. It is thus sometimes quite tempting to…
The non-Hermitian skin effect can arise in materials that have asymmetric hoppings between atoms or resonating units, which makes the bulk eigenspectrum sensitive to boundary conditions. When skin effect emerges, eigenstates in the bulk…
A non-Hermitian Chern insulator with gain/loss-type non-Hermiticity shows a peculiar gap closing; when a nontrivial Chern insulator phase changes to a gapless phase, conduction and valence bands are combined into one band owing to…
We present models of topological insulating Hamiltonians exhibiting intrinsic altermagnetic features, protected by combined three-fold or four-fold rotational symmetries with time-reversal. We demonstrate that the spin Chern number serves…
For decades, the topological phenomena in quantum systems have always been catching our attention. Recently, there are many interests on the systems where topologically protected edge states exist, even in the presence of non-Hermiticity.…
The Chern number is a crucial topological invariant for distinguishing the phases of Chern insulators. Here we find that for Chern insulators with inversion symmetry, the Chern number alone is insufficient to fully characterize their…
Commonly, a two-dimensional topological insulator is characterized by non-zero Chern numbers associated with its band structure. In our work, we present the experimental demonstration of an anomalous topological insulator, for which the…
As first demonstrated by the characterization of the quantum Hall effect by the Chern number, topology provides a guiding principle to realize robust properties of condensed matter systems immune to the existence of disorder. The…
We characterize non-Hermitian band structures by symmetry indicator topological invariants. Enabled by crystalline inversion symmetry, these indicators allow us to short-cut the calculation of conventional non-Hermitian topological…
Two-dimensional 2-bands insulators breaking time reversal symmetry can present topological phases indexed by a topological invariant called the Chern number. Here we first propose an efficient procedure to determine this topological index.…
Non-Hermiticity can vary the topology of system, induce topological phase transition, and even invalidate the conventional bulk-boundary correspondence. Here, we show the introducing of non-Hermiticity without affecting the topological…
A scenario of non-Hermitian bulk--boundary correspondence proposed for one-dimensional topological insulators is adapted to a non-Hermitian Chern insulator to examine its applicability to two-dimensional systems. This scenario employs bulk…
Quantum Hall systems host chiral edge states extending along the one-dimensional boundary of any two-dimensional sample. In solid state materials, the edge states serve as perfectly robust transport channels that produce a quantised Hall…
A non-Hermitian extension of a Chern insulator and its bulk-boundary correspondence are investigated. It is shown that in addition to the robust chiral edge states that reflect the nontrivial topology of the bulk (nonzero Chern number),…
The zero-mode corner states in the gap of two-dimensional non-Hermitian Su-Schrieffer-Heeger model are robust to infinitesimal perturbations that preserve chiral symmetry. However, we demonstrate that this general belief is no longer valid…
We show that the bulk-boundary correspondence for topological insulators can be modified in the presence of non-Hermiticity. We consider a one-dimensional tight-binding model with gain and loss as well as long-range hopping. The system is…
Multi-terminal topological devices are a new generation of electronic devices with quantized properties robust against imperfections. In magnetic topological insulators, dissipationless edge states give functional devices in zero magnetic…
In two-dimensional topological insulators, a disorder induced topological phase transition is typically identified with an Anderson localization transition at the Fermi energy. However, in higher-order, spin-resolved topological insulators…
The interplay between non-Hermiticity and topology opens an exciting avenue for engineering novel topological matter with unprecedented properties. While previous studies have mainly focused on one-dimensional systems or Chern insulators,…