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Related papers: A comprehensive model of high-concentration phosph…

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A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are generated…

Materials Science · Physics 2009-05-01 O. I. Velichko , N. V. Kniazhava

In this paper we present and experimentally validate a low-cost design of a spectral splitting concentrator for the efficient conversion of solar energy. The optical device consists of a dispersive prismatic lens made of polycarbonate…

Optics · Physics 2015-09-22 Carlo Maragliano , Matteo Chiesa , Marco Stefancich

Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to low-10^19 cm-3 P doping and a dislocation density of 10^8 to…

Materials Science · Physics 2016-11-23 Feiyang Cai , Dalaver H. Anjum , Xixiang Zhang , Guangrui , Xia

We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the…

Simple finite differencing of the anisotropic diffusion equation, where diffusion is only along a given direction, does not ensure that the numerically calculated heat fluxes are in the correct direction. This can lead to negative…

Instrumentation and Methods for Astrophysics · Physics 2015-05-19 Prateek Sharma , Gregory W. Hammett

Diffusion plays a key role in microstructure evolution at multicomponent alloys: diffusion controls the kinetics of phase transformations and alloy homogenization. This study aims at developing computationally efficient approaches to…

Materials Science · Physics 2024-11-05 Timofei Miryashkin , Ivan Novoselov , Alexey Yanilkin

We characterize the phase memory time of phosphorus donor electron spins in lightly-doped natural silicon at high magnetic field (8.58 T) in the dark and under low-power optical excitation. The spin echo decays are dominated by spectral…

Quantum Physics · Physics 2021-07-15 Lihuang Zhu , Johan van Tol , Chandrasekhar Ramanathan

Although spectrally selective materials play a key role in existing and emerging solar thermal technologies, temperature-related degradation currently limits their use to below 700C in vacuum, and even lower temperatures in air. Here we…

Mesoscale and Nanoscale Physics · Physics 2021-08-18 Zachary J. Berquist , Andrew J. Gayle , Neil P. Dasgupta , Andrej Lenert

High-reflectivity fused silica mirrors are at the epicentre of current advanced gravitational wave detectors. In these detectors, the mirrors interact with high power laser beams. As a result of finite absorption in the high reflectivity…

A molecular-dynamics thermal annealing model is proposed to investigate the mechanisms involved in picosecond pulsed laser ablation of crystalline silicon. In accordance with the thermal annealing model, a detailed description of the…

Materials Science · Physics 2007-05-23 Patrick Lorazo , Laurent J. Lewis , Michel Meunier

Isotopically layered amorphous solid water films were used to measure the diffusivity of deeply supercooled liquid water near the glass transition. The films, composed of separate layers of oxygen 16 and oxygen 18 labeled water, were grown…

Soft Condensed Matter · Physics 2025-02-06 R. Scott Smith , Wyatt A. Thornley , Greg A. Kimmel , Bruce D. Kay

Large scale molecular dynamics and grand canonical Monte Carlo simulation techniques are used to study the behavior of the interdiffusion of a solvent into an entangled polymer matrix as the state of the polymer changes from a melt to a…

Soft Condensed Matter · Physics 2009-11-10 Mesfin Tsige , Gary S. Grest

We have extended the range of the high-pressure optical spectroscopy to the far-infrared region keeping the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase…

Strongly Correlated Electrons · Physics 2014-01-15 I. Kezsmarki , R. Gaal , C. C. Homes , B. Sipos , H. Berger , S. Bordacs , G. Mihaly , L. Forro

Accurate absorption models for gases at high pressure and temperature support advanced optical combustion diagnostics and aid in the study of harsh planetary atmospheres. Developing and validating absorption models for these applications…

We produce YbF molecules with a density of 10^18 m^-3 using laser ablation inside a cryogenically-cooled cell filled with a helium buffer gas. Using absorption imaging and absorption spectroscopy we study the formation, diffusion,…

Thermophotovoltaic systems in principle enable utilization of heat that is usually regarded as wasted energy. However, the wavelength selectivity of the thermal emitter required for high efficiencies is rather difficult to control with…

Applied Physics · Physics 2019-06-14 Masahiro Suemitsu , Takashi Asano , Takuya Inoue , Susumu Noda

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the…

Materials Science · Physics 2007-05-23 O. I. Velichko , A. M. Mironov , V. A. Tsurko , G. M. Zayats

The work describes the properties of the high-pressure superconducting state in phosphor: $p\in\{20, 30, 40, 70\}$ GPa. The calculations were performed in the framework of the Eliashberg formalism, which is the natural generalization of the…

Superconductivity · Physics 2023-07-19 A. M. Duda , R. Szczęśniak , M. Sowińska , I. Domagalska

The interdiffusion of a solvent into a polymer melt has been studied using large scale molecular dynamics and Monte Carlo simulation techniques. The solvent concentration profile and weight gain by the polymer have been measured as a…

Soft Condensed Matter · Physics 2009-11-10 Mesfin Tsige , Gary S. Grest

We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer…