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Field-plated (FP) depletion-mode MOVPE-grown $\beta$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents…
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…
Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme…
We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift…
Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…
A compact resonance ionization mass spectrometer is developed using two laser diodes and a quadrupole mass spectrometer to perform trace element analysis of potassium. With the help of a narrow linewidth of the laser diode, the isotope…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
The new TeraFET design with identical source and drain antennas enables a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz (THz) range of frequencies at room temperature. It could…
Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before…
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been…
Single-crystal organic field-effect transistors (OFETs) based on p-channel molecular semiconductors have led to breakthrough carrier mobilities and to the observation of band-like transport. These results represent the limit in our quest…
By configuring a radio-frequency single-electron transistor as a mixer, we demonstrate a unique implementation of this device, that achieves good charge sensitivity with large bandwidth about a tunable center frequency. In our…
Historically employed spectroscopic architectures used for large field of view mapping spectroscopy in millimetere and sub-millimetre astronomy suffer from significant drawbacks. On-chip filterbank spectrometers are a promising technology…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
We report on the development of transmission-line reflectionless filters operating with passbands at 100 GHz and 230 GHz, and stopband absorption up to 500 GHz, the highest operating frequencies yet recorded for such filters. The designs…
Phase-change materials (PCMs) can switch between different crystalline states as a function of an external bias, offering a pronounced change of their dielectric function. In order to take full advantage of these features for active…
A field-effect transistor (FET) amplifier for small voltage signals is presented. Its design is elementary and the construction can be afforded by anyone. Despite its simplicity, with a voltage noise less than 1 nV/sqrt(Hz), it outperforms…
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…