Related papers: Atomic-scale Control of Tunnel Coupling
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
We propose and implement a lattice scheme for coherently manipulating atomic spins. Using the vector light shift and a superlattice structure, we demonstrate experimentally the capability on parallel spin addressing in double-wells and…
We study the Anderson single-level quantum dot attached to two BCS superconducting leads with the same gap size. We reveal that a system with asymmetric tunnel coupling to the leads ($\Gamma_{L}\neq\Gamma_{R}$) can be related to the…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of…
Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a…
Building blocks of quantum computers have been demonstrated in small to intermediate-scale systems. As one of the leading platforms, the trapped ion system has attracted wide attention. A significant challenge in this system is to combine…
The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…
Recent advances in scanning transmission electron and scanning tunneling microscopies allow researchers to measure materials structural and electronic properties, such as atomic displacements and charge density modulations, at an Angstrom…
Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…
The advancement of scalable quantum information processing relies on the accurate and parallel manipulation of a vast number of qubits, potentially reaching into the millions. Superconducting qubits, traditionally controlled through…
Creating a quantum-coherent architecture at the atomic scale has long been an ambition in quantum science and nanotechnology. This ultimate length scale requires the use of fundamental quantum properties of atoms, such as the spin of…
The control over quantum states in atomic systems has led to the most precise optical atomic clocks to date. Their sensitivity is currently bounded by the standard quantum limit, a fundamental floor set by quantum mechanics for uncorrelated…
Atomic level qubits in silicon are attractive candidates for large-scale quantum computing, however, their quantum properties and controllability are sensitive to details such as the number of donor atoms comprising a qubit and their…
It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are…
Quantum mechanics dominates various effects in modern research from miniaturizing electronics, up to potentially ruling solid-state physics, quantum chemistry and biology. To study these effects experimental quantum systems may provide the…
Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
We present an economical dynamical control scheme to perform quantum computation on a one dimensional optical lattice, where each atom encodes one qubit. The model is based on atom tunneling transitions between neighboring sites of the…