Related papers: Dynamics of Ferroelectric Negative Capacitance -- …
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…
In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase field approach, where the three-dimensional time-dependent…
The dynamics of a free boundary problem for electrostatically actuated microelectromechanical systems (MEMS) is investigated. The model couples the electric potential to the deformation of the membrane, the deflection of the membrane being…
In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field…
This paper contains a thorough investigation of the performance of electrically activated layered soft dielectric composite actuators under plane deformation. Noting that the activation can be induced controlling either the voltage or the…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
An idealized electrostatically actuated microelectromechanical system (MEMS) involving an elastic plate with a heterogeneous dielectric material is considered. Starting from the electrostatic and mechanical energies, the governing evolution…
The use of integrated MicroElectroMechanical systems (MEMS) is recently spread thanks to their improved sensitivity, accuracy and reliability. Accurate preliminary computations born from the need of high precision in the manufacturing…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…
Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and…
The concept of a nano-actuator that uses ferroelectric switching to generate enhanced displacements is explored using a phase-field model. The actuator has a ground state in the absence of applied electric field that consists of polarized…
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics,…
Strain-mediated magnetoelectric (ME) heterostructures enable electric-field control of magnetism and are promising for ultra-low-power spintronic logic. Yet achieving spatially selective, low-voltage control in thin films and quantifying ME…
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are…
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…
This article proposes an offline Energy Management System (EMS) for Parallel Hybrid Electric Vehicles (PHEVs). Dividing the torque between the Electric Motor (EM) and the Internal Combustion Engine (ICE) requires a suitable EMS. Batteries…
Magneto-electric effect in a multiferroic heterostructure film, i.e. a coupled ferromagnetic-ferroelectric thin film, has been investigated through the use of the Metropolis algorithm in Monte Carlo simulations. A classical Heisenberg model…
This work presents the mathematical modeling and numerical investigation of a thermo-controlled Micro-Electro-Mechanical System (MEMS) obtained by coupling an HP memristor with mechanical and electrical resonators. Using the linear drift HP…
Reluctance actuators are preferred for high-precision applications. Due to resistive losses in the coils, the accuracy of this type of actuator will reduce in quasi-static operation mode within a vacuum environment. By using soft permanent…