Related papers: Nanowire photodetectors based on wurtzite semicond…
At the core of quantum photonic information processing and sensing, two major building pillarsare single-photon emitters and single-photon detectors. In this review, we systematically summarize the working theory, material platform,…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been…
Here we propose a new design paradigm for a superconducting nanowire single photon detector that uses a multi-layer architecture that places the electric leads beneath the nanowires. This allows for a very large number of detector elements,…
This work implements a hybrid device based on a semiconductor quantum dot embedded within a nanowire to bridge a non-continuous curved waveguide structure. The geometry takes advantage of evanescent coupling between the photonic structures…
Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction…
Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly…
Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon…
Enhanced photocurrent is demonstrated in a junction-less photodetector with nanowires embedded in its channel. The fabricated photodetector consists of a large area for efficient absorption of incident light with energy band engineering…
Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., large surface-to-volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier dynamics are much more complicated than those of thin films.…
Single-photon detection possibility is a fundamental requirement for quantum technologies, including communication, computing and sensing. To achieve scalability and practical deployment, increasing attention is being directed toward…
Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature.…
Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet,…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
We present the experimental demonstration of a superconducting photon number resolving detector. It is based on the series connection of N superconducting nanowires, each connected in parallel to an integrated resistor. The device provides…
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…