Related papers: Ultra-low-power orbital-controlled magnetization s…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…
Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon…
The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles…
Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin…
All optical magnetic switching (AOS) is a recently observed rich and puzzling phenomenon that offers promis- ing technological applications. However, fundamental understanding of the underlying mechanisms remains elusive. Here we present a…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
The dynamics of a spin torque driven ferrimagnetic (FiM) system is investigated using the two-sublattice macrospin model. We demonstrate an ultrafast switching in the picosecond range. However, we find that the excessive current leads to…
We investigate the the itinerant ferromagnetism in a dipolar Fermi atomic system with the anisotropic spin-orbit coupling (SOC),which is traditionally explored with isotropic contact interaction.We first study the ferromagnetism transition…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…
Electric-field control of magnetism provides a promising route towards ultralow power information storage and sensor technologies. The effects of magneto-ionic motion have so far been prominently featured in the direct modification of…
We present a general theory for designing realistic omega-type bianisotropic metasurfaces (O-BMSs), unlocking their full potential for molding electromagnetic fields. These metasurfaces, characterized by electric surface impedance, magnetic…
Atomic-scale control of spins by electric fields is highly desirable for future technological applications. Magnetically-doped Aurivillius-phase oxides present one route to achieve this, with magnetic ions substituted into the ferroelectric…
In this paper, we consider a ferromagnetic material of ellipsoidal shape. The associated magnetic moment then has two asymptotically stable opposite equilibria, of the form $\pm\overline{m}$. In order to use these materials for memory…
Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader…
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we…
Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from…
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular magnetic anisotropy. In particular, we study the effect of…
Using density functional theory we show that the interaction between two Mn atoms can be tuned from anti-ferromagnetic (AFM) to ferromagnetic (FM) state by creating charge disproportion between the two on a 2D surface. The non-metallic…