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Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density…

Atomically thin MoS2 layer is a direct bandgap semiconductor exhibiting strong electron-hole interaction due to the extreme quantum confinement and reduced screening of Coulomb interactions, which results in the formation of stable excitons…

Mesoscale and Nanoscale Physics · Physics 2020-05-13 Kwang Jin Lee , Wei Xin , Chunlei Guo

In transition metal dichalcogenides layers of atomic scale thickness, the electron-hole Coulomb interaction potential is strongly influenced by the sharp discontinuity of the dielectric function across the layer plane. This feature results…

We address the properties of excitons in monolayer MoS$_2$ from a theoretical point of view, showing that low-energy excitonic states occur both at the Brillouin zone center and at the Brillouin-zone corners, that binding energies at the…

Mesoscale and Nanoscale Physics · Physics 2015-02-25 Fengcheng Wu , Fanyao Qu , A. H. MacDonald

Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional…

Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which…

Atomically thin two-dimensional crystals have revolutionized materials science. In particular, monolayer transition metal dichalcogenides promise novel optoelectronic applications, due to their direct energy gaps in the optical range. Their…

Many of the fundamental optical and electronic properties of atomically thin transition metal dichalcogenides are dominated by strong Coulomb interactions between electrons and holes, forming tightly bound atom-like excitons. Here, we…

Excitons in MoS2 dominate the absorption and emission properties of the two-dimensional system. Here, we study the microscopic origin of the electroluminescence from monolayer MoS2 fabricated on a heavily p-type doped silicon substrate. By…

Mesoscale and Nanoscale Physics · Physics 2015-06-16 Yu Ye , Ziliang Ye , Majid Gharghi , Hanyu Zhu , Mervin Zhao , Xiaobo Yin , Xiang Zhang

In this work, we present a mathematical model for the Wannier-Mott exciton in monolayers of transition metal dichalcogenides such as $WS_2$, $WSe_2$, $MoS_2$, $MoSe_2$ that estimates the radiation lifetime in the effective mass…

Mesoscale and Nanoscale Physics · Physics 2025-06-06 Rohit Ramesh Nimje , Swati G , Ashutosh Mahajan

When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a fermionic plasma of unbound particles or a bosonic exciton gas. Usually, the exciton phase is associated with low temperatures. In atomically…

In heterostructures consisting of different transition-metal dichalcogenide monolayers, a staggered band alignment can occur, leading to rapid charge separation of optically generated electron-hole pairs into opposite monolayers. These…

In order to discuss the exciton fine-structure of transition-metal dichalcogenides mono-layers, excitons are first defined in the subspace of electron- and hole states, including the lowest conduction band (LCB) and the uppermost valence…

Mesoscale and Nanoscale Physics · Physics 2019-06-25 Pierre Gilliot , Mathieu Gallart , Bernd Hönerlage

We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $\tau_{rad}=1.8\pm0.2$ ps…

Materials Science · Physics 2016-05-18 C. Robert , D. Lagarde , F. Cadiz , G. Wang , B. Lassagne , T. Amand , A. Balocchi , P. Renucci , S. Tongay , B. Urbaszek , X. Marie

We discuss here the effect of band nesting and topology on the spectrum of excitons in a single layer of MoS$_2$, a prototype transition metal dichalcogenide material. We solve for the single particle states using the ab initio based…

Materials Science · Physics 2020-03-25 Maciej Bieniek , Ludmiła Szulakowska , Paweł Hawrylak

Just as photons are the quanta of light, plasmons are the quanta of orchestrated charge-density oscillations in conducting media. Plasmon phenomena in normal metals, superconductors and doped semiconductors are often driven by…

Materials Science · Physics 2017-11-22 Dinh Van Tuan , Benedikt Scharf , Igor Žutić , Hanan Dery

The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large…

Mesoscale and Nanoscale Physics · Physics 2020-11-10 Takashi Kuroda , Yusuke Hoshi , Satoru Masubuchi , Mitsuhiro Okada , Ryo Kitaura , Kenji Watanabe , Takashi Taniguchi , Tomoki Machida

We examine a mechanism by which excitons undergo ultrafast relaxation in common monolayer transition metal dichalcogenides. It is shown that at densities $\approx$ 1$\times$ 10$^{11}$ cm$^{-2}$ and temperatures $ \le 60$ K, excitons in well…

Mesoscale and Nanoscale Physics · Physics 2016-06-29 A. Thilagam

The formation of intra-layer and inter-layer exciton condensates in a model of a double monolayer Weyl semi-metal is studied in the strong coupling limit using AdS/CFT duality. We find a rich phase diagram which includes phase transitions…

High Energy Physics - Theory · Physics 2015-09-30 Gianluca Grignani , Andrea Marini , Namshik Kim , Gordon W. Semenoff

Optical properties of transition metal dichalcogenides monolayers are controlled by the Wannier-Mott excitons forming a series of $1s$, $2s$, $2p$,... hydrogen-like states. We develop the theory of the excited excitonic states energy…

Mesoscale and Nanoscale Physics · Physics 2017-02-01 M. M. Glazov , L. E. Golub , G. Wang , X. Marie , T. Amand , B. Urbaszek
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