Related papers: Enhancing spin-orbit torque by strong interfacial …
In the increasing interests on spin-orbit torque (SOT) with various magnetic materials, we investigated SOT in rare earth-transition metal ferrimagnetic alloys. The harmonic Hall measurements were performed in Pt/GdFeCo bilayers to quantify…
Spin-orbit torque (SOT) has been extensively studied as a key mechanism in spintronics applications. However, conventional SOT materials limit the spin polarization direction to the in-plane orientation, which is suboptimal for efficient…
We report that current-induced spin-orbit torques (SOTs) in heavy-metal/ferromagnetic-metal bilayers are strongly altered by the oxidation of the ferromagnetic layer near the interface. We measured damping-like (DL) and field-like (FL) SOTs…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection.…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…
The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…
Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly non-linear properties governing robust mutual…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
Topological insulators have attracted great interest as generators of spin-orbit torques (SOTs) in spintronic devices. Bi\textsubscript{1-x}Sb\textsubscript{x} is a prominent topological insulator that has a high charge-to-spin conversion…
Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic…
Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied,…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
Electrical currents in a magnetic insulator/heavy metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy metal side and spin-orbit torques (SOTs) on the magnetic insulator side.…
Strengthening magnetoacoustic coupling is crucial to the improvement of the surface acoustic wave (SAW)-driven spintronics devices. A key challenge in enhancing magnetoacoustic coupling is minimizing the phonon and magnon dissipation of the…