Related papers: Atomically Engineered Hf0.5Zr0.5O2 Integrated Nano…
The integration of GHz-frequency, high quality factor ($Q$), and electrically tunable acoustic resonators holds significant potential for advancing applications in quantum information technologies, microwave photonics, and reconfigurable RF…
This paper details the development of high-quality, c-axis oriented AlN thin films up to 2 {\mu}m thick, using sputtering on platinum-coated SOI substrates for use in piezoelectric MEMS. Our comprehensive studies illustrate how important…
Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001)…
Nanoscale pulsed light is highly desirable in nano-integrated optics. In this letter, we obtained femtosecond pulses with THz repetition frequency via the strong coupling between quantum emitters (QEs) and plasmonic resonators. Our…
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scaling. Further reduction in thickness is essential for…
The ability to engineer and manipulate different types of quantum mechanical objects allows us to take advantage of their unique properties and create useful hybrid technologies. Thus far, complex quantum states and exquisite quantum…
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC…
Understanding and minimizing the sources of frequency noise in nanomechanical resonators is crucial for many sensing applications. In this work, we report an ultracoherent perimeter-mode nanomechanical resonator co-integrated with an…
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation…
We study the electromechanical transduction in nanoelectromechanical actuators and show that the differences in scaling for electrical and mechanical effects lead to an overall non-trivial scaling behavior. In particular, the previously…
This article presents a comprehensive study and design methodology of co-integrated oscillators for nano mass sensing application based on resonant Nano-Electro-Mechanical-System (NEMS). In particular, it reports the capacitive with the…
Designing molecular organic semiconductors with distinct frontier orbitals is key for the development of devices with desirable properties. Generating defined organic nanostructures with atomic precision can be accomplished by on-surface…
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena…
Ferroics and multiferroics are unique objects for fundamental physical research of complex nonlinear processes and phenomena, which occur in them in micro and nanoscale. Due to the possibility of their physical properties control by size…
Miniaturization is an essential element in the development of information processing technologies and is also one of the main determinants of the usability of the tested artificial neural networks. It is also a key element and one of the…
Recent experimental results demonstrate that in thin films ferroelectricity persists down to film thickness of a few unit cells. This finding opens an avenue for novel electronic devices based on ultathin ferroelectrics, but also raises…
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer…
The transmission of acoustic phonons is an important element in the design and performance of nano-mechanical devices operating in the mesoscopic limit. Analytic expressions for the power transmission coefficient, T, exist only in the…
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…
Light-sound interactions have long been exploited in various acousto-optic devices based on bulk crystalline materials. Conventionally these devices operate in megahertz frequency range where the acoustic wavelength is much longer than the…