Related papers: III-nitride on silicon electrically injected micro…
Photonic integrated circuits find ubiquitous use in various technologies, from communication, to computing and sensing, and therefore play a crucial role in the quantum technology counterparts. Several systems are currently under…
Finding the right material platform for engineering efficient photonic interfaces to solid state emitters has been a long-standing bottleneck for scaling up solid state quantum systems. In this work, we demonstrate that nitrogen-rich…
Extending two-dimensional photonic integrated circuits (PICs) to three-dimensional (3D) configurations promises great potential for scaling up integration, enhancing functionality, and improving performance of PICs. Silicon-based 3D PICs…
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…
Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency…
Photonics caught world attention since channel capacity limit of metallic interconnects approached due to research and design in high speed digital processors. Use of dielectrics, instead, suitable for light propagation was more attractive…
It has recently been shown that silicon nanophotonic waveguides can be used to construct all of the components of a photonic data transmission system on a single chip. These components can be integrated together with CMOS electronics to…
Electrical control of light in integrated photonics is central to a wide range of research and applications. It is conventionally achieved with thermo-optic tuning, but this suffers from high energy consumption and crosstalk.…
The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse…
We investigate - both experimentally and theoretically - the inelastic interaction between fast electrons and the electromagnetic field scattered by metallic apertures and nanostructures on dielectric membranes using photon induced…
We have developed a silicon nitride based photonic integrated circuit (PIC) that is responsible for the cooling, pumping and imaging of cold rubidium 87 atoms. The photonic integrated circuit consists of two chips placed next to each other…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency…
Besides being the foundational material for microelectronics, in optics, crystalline silicon has long been used for making infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of…
Integrated quantum photonics requires compact, efficient, and low-power phase modulators. While silicon nitride (SiN) is a promising platform, existing modulators suffer from high power consumption, thermal crosstalk, or high driving…
Interfacing cold atoms with integrated nanophotonic devices could offer new paradigms for engineering atom-light interactions and provide a potentially scalable route for quantum sensing, metrology, and quantum information processing.…
At sub-20nm technologies CMOS scaling faces severe challenges primarily due to fundamental device scaling limitations, interconnection overhead and complex manufacturing. Migration to 3D has been long sought as a possible pathway to…
Today's supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would…
Aluminum nitride and silicon nitride have recently emerged as important nonlinear optical materials in integrated photonics respectively for their quadratic and cubic optical nonlinearity. A composite aluminum nitride and silicon nitride…