Related papers: Spin pumping and spin torque in interfacial tailor…
Ferromagnetic materials exhibiting low magnetic damping ($\alpha$) and moderately high saturation magnetization are required from the viewpoints of generation, transmission and detection of spin wave. Since spin-to-charge conversion…
From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021 - 0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of…
Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed…
The spin pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered Co2FeAl (CFA) /Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin current…
Spin transfers in magnetic multilayers offers a promising pathway toward ultrafast, energy-efficient spintronic devices. In this study, we investigate the interfacial spin pumping and temperature-dependent spin current exchange in a…
Materials with strong spin orbit coupling (SOC) are essential for realizing spin orbit torque (SOT) based magnetic memory devices. Transition metal dichalcogenides (TMDs) are promising candidates for such appli cations because of their…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
The paper concerns experimental verification of the magnitude of imaginary part of spin mixing conductance in bilayers comprising heavy metals. We present results of broadband ferromagnetic resonance studies on heterostructures consisting…
In view of their advantages for memory and storage applications, the quest to find suitable magnetic thin film heterostructures that can exhibit strong spin pumping effect persists in the scientific community. Here, the spin pumping…
High spin to charge conversion efficiency is the requirement for the spintronics devices which is governed by spin pumping and inverse spin Hall effect (ISHE). In last one decade, ISHE and spin pumping are heavily investigated in…
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet…
Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge…
The spin waves and ferromagnetic resonance (FMR) contribution to the spin pumping signal is studied in the Ta/CoFeB interface under different excitation bias fields. Ferromagnetic resonance is excited utilizing a coplanar waveguide and a…
We measured spin transport in nonferromagnetic (NM) metallic multilayers from the contribution to damping due to spin pumping from a ferromagnetic Co90Fe10 thin film. The multilayer stack consisted of NM1/NM2/Co90Fe10(2 nm)/NM2/NM3 with…
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall…
First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric…
$\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for…