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The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex)…
Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation…
Cu(In,Ga)Se2 (CIGSe)-based solar cells are promising candidates for efficient sunlight harvesting. However, their complex composition and microstructure can change under operation conditions, for instance heating from sun light illumination…
Photon transport through a diffusing slab can be described by the radiative transfer equation (RTE). When the slab is highly scattering and weakly absorbing, the RTE simplifies to the diffusion equation. In this paper, an inverse diffusion…
Carrier multiplication (CM), a photo-physical process to generate multiple electron-hole pairs by exploiting excess energy of free carriers, is explored for efficient photovoltaic conversion of photons from the blue solar band,…
The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped…
One of the most significant features of lead-halide perovskites are their ability to have comparably slow recombination despite the fact that these materials are mostly processed from solution at room temperature. The slow recombination…
In polymer:fullerene solar cells, the origin of the losses in the field-dependent photocurrent is still controversially debated. We contribute to the ongoing discussion by performing photo-induced charge extraction measurements on…
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large…
Using cross-correlation current noise spectroscopy, we have investigated carrier dynamics in methylammonium lead triiodide solar cells. This method provides a space selectivity for devices with planar multi-layered structure, effectively…
Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature…
The oxygen evolution reaction (OER) at the surface of semiconductor photoanodes involves photo-generated holes that oxidize water. A certain fraction of the holes that reach the surface recombine with electrons from the conduction band,…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
Two-dimensional materials with unique physicochemical properties promote photocatalytic activities. As the 2D material composites research studies the statistical average of complex catalytic behaviors, an integrated photonic platform…
We report on photoluminescence in the 3-7 $\mu$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at…
We present a theoretical investigation of the yet unexplored ultrafast processes and dynamics of the produced excited carriers upon irradiation of Silicon with femtosecond pulsed lasers in the mid-infrared (mid-IR) spectral region. The…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic…
In dense hot star winds, the infrared and radio continua are dominated by free-free opacity and recombination emission line spectra. In the case of a spherically symmetric outflow that is isothermal and expanding at constant radial speed,…
Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization…
In2O3 is an n-type transparent semiconducting oxide possessing a surface electron accumulation layer (SEAL) like several other relevant semiconductors, such as InAs, InN, SnO2, and ZnO. Even though the SEAL is within the core of the…