Related papers: Spin-orbit Torque and Spin Hall Effect-based Cellu…
The manipulation of antiferromagnetic order by means of spin-orbit torques opens unprecedented opportunities to exploit the dynamics of antiferromagnets in spintronic devices. In this work, we investigate the current-induced switching of…
Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as negative magnetic damping and thereby excite self-oscillations of its magnetization. In contrast, spin torque uniformly applied to the magnetization of…
Spintronics had a widespread impact over the past decades due to transferring information by spin rather than electric currents. Its further development requires miniaturization and reduction of characteristic timescales of spin dynamics…
We propose a spintronics-based hardware implementation of neuromorphic computing, specifically, the spiking neural network, using topological winding textures in one-dimensional antiferromagnets. The consistency of such a network is…
Molecular spintronics is made possible by the coupling between electronic configuration and magnetic po- larization of the molecules. For control and application of the individual molecular states it is necessary to both read and write…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…
When a flow of electron passes through a paramagnetic layer with strong spin-orbit-coupling such as platinum (Pt), a net spin current is produced via spin Hall effect (SHE). This spin current can exert a torque on the magnetization of an…
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…
Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…
Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
Electric-field control of magnetism without electric currents potentially revolutionizes spintronics towards ultralow power. Here by using mechanically coupled phase field simulations, we computationally demonstrate the application of the…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
MXenes have attracted considerable attention in recent years owing to their two-dimensional (2D) layered structures with various functionalities similar to those of graphene and transition metal dichalcogenides. To open a new application…
Magnetization dynamics in nanomagnets has attracted broad interest since it was predicted that a dc-current flowing through a thin magnetic layer can create spin-wave excitations. These excitations are due to spin-momentum transfer, a…